Zobrazeno 1 - 10
of 26
pro vyhledávání: '"L.K. Hanes"'
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A monolithic transmit-receive GaAs FET switch capable of switching more than 10 W CW power with about 1 dB insertion loss and 26 dB isolation at X-band frequencies is reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbb0a5bc4dcc61743ba51678b07f3c4
https://doi.org/10.1109/mcs.1982.1112178
https://doi.org/10.1109/mcs.1982.1112178
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A wideband monolithic phase shifter operating in the 2-8 GHz frequency range is reported. Six GaAs FETs per bit are used as switch elements in a bridge configuration which alternatively becomes a highpass or a low-pass section. Their low impedance st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9d83bf316afa48c3631b8aa45d5c492
https://doi.org/10.1109/mcs.1984.1113617
https://doi.org/10.1109/mcs.1984.1113617
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
A high-efficiency power process based on a 0.25- mu m pseudomorphic HEMT (high-electron-mobility transistor) has been developed that consistently demonstrates state-of-the-art performance at X- through Ku-band frequencies. Discrete 1.2-mm transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::279ac41bd3bf1fadb6324509d36f2966
https://doi.org/10.1109/gaas.1992.247269
https://doi.org/10.1109/gaas.1992.247269
Autor:
D.G. Seiler, L.K. Hanes
Publikováno v:
Solid-State Electronics. 31:493-496
Laser induced cooling (LIC) of the conduction electrons in n-InSb is observed with the simultaneous application of a non-ohmic electric field and CO laser radiation near the effective gap. A model based on free carrier assisted transitions (FCAT) is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b733484147e60914d59d7e4001afc828
https://doi.org/10.1016/0038-1101(88)90326-7
https://doi.org/10.1016/0038-1101(88)90326-7
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 32:290-295
Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58e7f4fa60138161ae970f146b9a9bbf
https://doi.org/10.1109/tmtt.1984.1132667
https://doi.org/10.1109/tmtt.1984.1132667
Autor:
L.K. Hanes, D.G. Seiler
Publikováno v:
Optics Communications. 28:326-330
CO laser-induced photoconductivity measurements in n-InSb at 1.8 K are shown to give information on the amount of carrier heating and the absorption processes near the bandgap. A model is presented to explain the observed dependence of the electron t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e70dae203b6ed31adb5f6ac36ba6e8
https://doi.org/10.1016/0030-4018(79)90331-6
https://doi.org/10.1016/0030-4018(79)90331-6
Publikováno v:
Journal of Magnetism and Magnetic Materials. 11:247-252
CO laser-induced hot electrons in n-InSb at 1.8 K have been studied with the Shubnikov-de Haas effect which permits extraction of the electron temperature as a function of peak incident laser power.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38c34891c68f65132f7e28c77654bfc3
https://doi.org/10.1016/0304-8853(79)90272-5
https://doi.org/10.1016/0304-8853(79)90272-5
Autor:
L.K. Hanes, D.G. Seiler
Publikováno v:
Optics Communications. 34:89-94
Laser-induced cooling of the conduction electrons in n-InSb is observed for CO laser photon energies near the bandgap (229–234 meV). This cooling is caused by a new mechanism which we call cold electron photo-injection (CEPI) produced by the simult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33c6d0fb97b616313fc0c3cbf36fdb3
https://doi.org/10.1016/0030-4018(80)90166-2
https://doi.org/10.1016/0030-4018(80)90166-2
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 32:71-77
Single-stage and two-stage GaAs traveling-wave amplifiers operating with flat gain responses in the 2-20-GHz frequency range are described. The circuits are realized in monolithic form on a 0.1-mm GaAs substrate with 50-Omega input and output lines.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c5e685049ce0de75d3309d58dcb451
https://doi.org/10.1109/tmtt.1984.1132614
https://doi.org/10.1109/tmtt.1984.1132614
