Zobrazeno 1 - 10
of 55
pro vyhledávání: '"L.J. Peticolas"'
Autor:
Abdallah Ougazzaden, L.J. Peticolas, Alexander Kazimirov, C.L. Reynolds, Ernie Fontes, D. H. Bilderback, Rong Huang, Andrei Sirenko
Publikováno v:
Journal of Crystal Growth. 253:38-45
Properties of selective-area-grown (SAG) ternary and quaternary layers of InGaAs and InGaAsP produced by metal organic vapor phase epitaxy (MOVPE) have been investigated by using a combination of micro-photoluminescence and synchrotron-based micro-be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a147a010d9121c3b966b2c210cdabe6
https://doi.org/10.1016/s0022-0248(03)00996-5
https://doi.org/10.1016/s0022-0248(03)00996-5
Autor:
K.F. Dreyer, John W. Stayt, John Michael Geary, R.E. Leibenguth, Liming Zhang, L.J.P. Ketelsen, W.A. Asous, M. Park, C.W. Lentz, Scott L. Broutin, R.L. Hartman, C. W. Ebert, Mark S. Hybertsen, L.J. Peticolas, C.L. Reynolds, J.E. Johnson, T.L. Koch, K.G. Glogovsky, K.K. Kamath, G.J. Przybylek, David Alan Ackerman
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:168-177
We report on a fully functional 2.5-Gb/s electroabsorption (EA)-modulated wavelength-selectable laser module meeting all long-haul transmission requirements for stability, chirp, power and linewidth over 20 channels on a 50-GHz grid. Based on a highl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c5a83f8888bce69cd92b69d2af0601
https://doi.org/10.1109/2944.954126
https://doi.org/10.1109/2944.954126
Autor:
K. Feder, Mark S. Hybertsen, J.M. Vandenberg, B.S. Falk, K. Evans-Lutterodt, Roosevelt People, John Michael Geary, Muhammad A. Alam, M.W. Focht, R.E. Leibenguth, Theo Siegrist, S.K. Sputz, J. Sheridan-Eng, G.J. Przybyiek, F.S. Walters, J.A. Grenko, L. E. Smith, J. Levkoff, K.G. Glogovsky, L.C. Luther, Michael Geva, D.M. Tennant, D. V. Stampone, S. Shunk, N.N. Tzafaras, L.J. Peticolas, L.J.P. Ketelsen, D.M. Romero, S. N. G. Chu, J.E. Johnson, J.L. Zilko, J.L. Lentz, T.L. Pernell, Joseph Michael Freund, E. D. Isaacs, Liming Zhang, W.A. Gault, C.L. Reynolds
Publikováno v:
IEEE Journal of Quantum Electronics. 36:641-648
We describe the design, fabrication, and performance of a five-element quarterwave-shifted distributed feedback laser array with monolithically integrated spot size converters intended for use as a multiple-wavelength source in dense wavelength-divis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827719dc6e70de0e798f899d38116719
https://doi.org/10.1109/3.845717
https://doi.org/10.1109/3.845717
Autor:
T.L. Pernell, Joseph Michael Freund, J.L. Lentz, J.E. Johnson, Roosevelt People, S.K. Sputz, F.S. Walters, S.N.G. Chu, M.W. Focht, L. A. Gruezke, L.J.P. Ketelsen, D. V. Stampone, D.M. Romero, L.J. Peticolas, L. E. Smith, G.J. Przybylek, J.A. Grenko, N.N. Tzafaras, C.L. Reynolds, Muhammad A. Alam, K.G. Glogovsky, J.M. Vandenberg, L.C. Luther
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 6:19-25
We have demonstrated a semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter at the input for low-loss coupling to planar lightguide circuit silica waveguides or clea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cbc79cc8c9e3a1db64fa555c20071bf
https://doi.org/10.1109/2944.826868
https://doi.org/10.1109/2944.826868
Autor:
Joe C. Campbell, J.C. Bean, L.J. Peticolas, A. Srinivasan, K.A. Anselm, S.S. Murtaza, B. G. Streetman
Publikováno v:
IEEE Journal of Quantum Electronics. 31:1819-1825
We report novel Bragg-reflecting structures that represent a departure from the conventional quarter-wavelength stacks used currently in the optoelectronics industry. These structures can be used to design high-reflectivity mirrors in strained materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::682d1a7e1f2c0243eed7bb7865a52fe6
https://doi.org/10.1109/3.466057
https://doi.org/10.1109/3.466057
Autor:
M. Rashed, Robert A. Mayer, A.F. Tasch, Joe C. Campbell, John C. Bean, S. S. Murtaza, Christine M. Maziar, D. Kinosky, L.J. Peticolas, Sanjay K. Banerjee
Publikováno v:
IEEE Transactions on Electron Devices. 41:2297-2300
We present room temperature electroabsorption measurements in a Ge/sub 0.2/Si/sub 0.8/ pin photodiode. The results appear to be very similar to those reported earlier on Ge/sub x/Si/sub 1-x//Si multiple quantum wells. >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c205c8e600752313768a179a514b891d
https://doi.org/10.1109/16.337431
https://doi.org/10.1109/16.337431
Autor:
R.J. Jurchenko, Joseph Michael Freund, L.J. Peticolas, J.W. Boardman, L.J.P. Ketelsen, Abdallah Ougazzaden, R.E. Leibenguth, Andrei Sirenko, S.N.G. Chu, T.L. Kercher, J. M. Geary, B. Mason, Charles W. Lentz, Gregory Raybon, Mark S. Hybertsen, M. Rader, C.L. Reynolds, K.G. Glogovsky, F.S. Walters, George John Przybylek
Publikováno v:
IEEE Photonics Technology Letters. 14:27-29
In this letter, we have developed a tandem electroabsorption modulator with an integrated semiconductor optical amplifier that is capable of both nonreturn-to-zero and return-to-zero (RZ) data transmission at 40 Gb/s. The tandem modulator consists of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc7d58f34eeb818af063d4d6492ee371
https://doi.org/10.1109/68.974150
https://doi.org/10.1109/68.974150
Publikováno v:
IEEE Transactions on Electron Devices. 39:2459-2464
The influence of C and Si impurities at the substrate/epitaxy interface on the threshold voltage of GaAs/AlGaAs selectively doped heterostructure transistors has been investigated both experimentally and theoretically using a one-dimensional simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91ec9ef8de8a285e9ae65e2ffaaffae3
https://doi.org/10.1109/16.163458
https://doi.org/10.1109/16.163458
Publikováno v:
IEEE Photonics Technology Letters. 8:927-929
We report a high-speed (15 GHz) and high-quantum-efficiency (67%) resonant-cavity photodetector with a Si absorbing layer and an asymmetric GeSi-Si Bragg reflector as the bottom mirror.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5350e537ad9678d7482500f4745131
https://doi.org/10.1109/68.502273
https://doi.org/10.1109/68.502273
Autor:
K.G. Glogovsky, George John Przybylek, Charles W. Lentz, L.J.P. Ketelsen, B. Mason, Joseph Michael Freund, L. Reynolds, J.W. Boardman, F.S. Walters, D. Monroe, M. Rader, T.L. Kercher, Abdallah Ougazzaden, L.J. Peticolas, J. M. Geary
Publikováno v:
Optical Fiber Communication Conference and Exhibit.
We report on the design, fabrication and characterization of a novel 40 Gb/s optical receiver. The device consists of a high-speed waveguide photodiode monolithically integrated with a semiconductor optical amplifier to create a fully photonic receiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfa379b9c0d6e31b4a2529be2bc47bab
https://doi.org/10.1109/ofc.2002.1036770
https://doi.org/10.1109/ofc.2002.1036770