Zobrazeno 1 - 10
of 26
pro vyhledávání: '"L.J. Olmer"'
Autor:
R.W. Schanzer, T.J. Lahey, O.D. Patterson, D.M. Oman, D.M. Shuttleworth, L.J. Olmer, T.S. Campbell
Publikováno v:
2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530).
This paper presents a case study in the identification and resolution of a product-specific systematic yield loss problem. The approach taken employed multiple parallel avenues of investigation including critical area analysis, analysis of wafer and
Publikováno v:
13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259).
Semiconductor manufacturers employ various techniques and tools to detect and identify the physical defects that limit product and process yields. Most of these techniques focus on measuring the front side of the semiconductor wafer where the devices
Autor:
L.J. Olmer, H.S. Isaacs
Publikováno v:
Journal of Electroanalytical Chemistry and Interfacial Electrochemistry. 132:59-65
The ac series resistance measured at 50 Hz has been compared with the dc resistance determined from the slope of the polarization curves for platinum on zirconia in air at 1000°C. The resistances varied with potential and the direction of potential
Publikováno v:
Solid State Ionics. :503-507
Reactions at electrodes in contact with solid oxide electrolytes have been studied for application in steam electrolyzers and fuel cells to determine properties which could affect voltage losses. Polarization, ac impedance, and cyclic voltammetry mea
Publikováno v:
Solid State Ionics. 7:23-35
The improvement of the water vapor reduction at a doped yttria-stabilized zirconia interface is studied. Cerium oxide which is known for its mixed conductivity ability and for behaving as a redox couple is used as a doping agent. The influence of the
Akademický článek
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Autor:
E.R. Lory, L.J. Olmer
Publikováno v:
Fifth IEEE/CHMT International Electronic Manufacturing Technology Symposium, 1988, 'Design-to-Manufacturing Transfer Cycle.
Plasma-enhanced deposition of a high-quality dielectric film for use as an intermetal dielectric in multilevel metal devices was demonstrated. Low-stress silicon dioxide films up to 2 mu m thick were deposited using tetraethylorthosilicate as a precu
Autor:
S. Srinivasan, K. V. Kordesch, H.S. Isaacs, E.J.L. Schouler, H. Olender, L.J. Olmer, James McBreen, W.E. O'Grady
Research on phosphoric acid-electrolyte fuel cells and high-temperature solid-electrolyte fuel cells is reported. The corrosion behavior of five Cabot Corporation furnace black carbon supports for platinum electrocatalysts in phosphoric acid was eval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4820e2b7e5ecb5346c095af8a7a70f8c
https://doi.org/10.2172/6541767
https://doi.org/10.2172/6541767
A study was undertaken to investigate the electrocatalysis of the formic acid and methanol oxidation reactions at underpotentially deposited metal surfaces at 25/sup 0/C. The test electrode was a smooth polycrystalline platinum disc, on which a metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7690e6564b2f846945a1fa422f6de270
https://doi.org/10.2172/5650422
https://doi.org/10.2172/5650422