Zobrazeno 1 - 10 of 154 pro vyhledávání: '"L.J. Geerligs"'
1
Experimental Investigation of 2-Terminal Voltage-Matched Perovskite/Crystalline Silicon Tandem Modules
Autor: Siegfried Christiaan Veenstra, L.A.G. Okel, Mariadriana Creatore, Dong Zhang, Mehrdad Najafi, L. Simurka, Gianluca Coletti, Valerio Zardetto, E. Hoek, Ilker Dogan, Henri Fledderus, L.J. Geerligs, P. Manshanden, A. E. A. Bracesco
Publikováno v: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 1553-1555
STARTPAGE=1553;ENDPAGE=1555;TITLE=2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
4-terminal tandem technology is a straightforward approach to bring to the market perovskite/crystalline silicon tandem modules. However, dealing with 4 terminals poses a challenge at system level for practical deployment. We have produced large area
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3e6bdd576509b663c93acf5a8a3e0e9
https://research.tue.nl/nl/publications/cfd4cf60-60ae-4aa6-b0fd-f52de35e0f7f
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2
n-Type polysilicon passivating contact for industrial bifacial n-type solar cells
Autor: Yu Wu, Ingrid G. Romijn, L.J. Geerligs, Martijn Lenes, M.K. Stodolny, Jan-Marc Luchies, Gerard J. M. Janssen
Publikováno v: Solar Energy Materials and Solar Cells. 158:24-28
We present a high-performance bifacial n-type solar cell with LPCVD n+ polysilicon (polySi) back side passivating contacts and fire-through screen-printed metallization, processed on full area 6″ Cz wafers. The cells were manufactured with low-cost
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::26c2116e005a74022d833dda8de5c205
https://doi.org/10.1016/j.solmat.2016.06.034
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3
In-situ Doping and Local Overcompensation of High Performance LPCVD Polysilicon Passivated Contacts as Approach to Industrial IBC Cells
Autor: M.K. Stodolny, Jan-Marc Luchies, Yu Wu, L.J. Geerligs, Martijn Lenes
Publikováno v: Energy Procedia. 92:427-433
In this work, we investigate polysilicon passivation contacts, to be used for high performance IBC cells. We demonstrate an LPCVD process for in-situ p-type doped polysilicon. The p-type polysilicon can be locally overcompensated to n-type polysilico
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e8502dd552a089fd07baebabb252cf2
https://doi.org/10.1016/j.egypro.2016.07.123
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4
High efficiency 4-terminal perovskite/c-Si tandem cells
Autor: Tom Aernouts, Valerio Zardetto, Sjoerd Veenstra, Dong Zhang, Mehrdad Najafi, Xuedong Zhou, L.J. Geerligs, Maarten Dörenkämper, Ronn Andriessen
Publikováno v: Solar Energy Materials and Solar Cells, 188, 1-5
The perovskite/c-Si tandem technology is considered as a cost-effective approach to realize a cell efficiency beyond the limit of single-junction (SJ) c-Si cells. Compared to its counterpart of 2-terminal (2T) configuration, 4-terminal (4T) tandem ha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed51c6fcd714c4b7b9f0d1a95e72d08a
http://resolver.tudelft.nl/uuid:3d187bf7-0680-467f-ae9d-09e906985080
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5
Study of screen printed metallization for polysilicon based passivating contacts
Autor: M.K. Stodolny, Jochen Löffler, Yu Wu, Martijn Lenes, G.J.M. Janssen, E.H. Ciftpinar, Jurriaan Schmitz, Jan-Marc Luchies, L.J. Geerligs
Publikováno v: Energy procedia, 124, 851-861. Elsevier
We investigate contacting of n- and p-type polysilicon (polySi) passivating contact layers with industrial screen-printed metal pastes, examining both fire through (FT) and non-fire through (NFT) pastes. The n- and p-type polySi layers, deposited by
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6703772c05e2df3e919bcefcafeb033
http://resolver.tudelft.nl/uuid:452da8d0-b2e9-4178-92a8-f4b83b10af4c
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6
High Efficiency n-Type Metal Wrap through Cells and Modules
Autor: Chen Jianhui, N. Guillevin, B. Heurtault, J.H. Bultman, Shen Yanlong, Chen Yingle, Ian Bennett, Yu Bo, L.D. Berkeveld, Tian Shuquan, B.B. Van Aken, Xiong Jingfeng, M.J. Jansen, Wang Ziqian, Hu Zhiyan, Arthur Weeber, Li Gaofei, Wang Jianming, Zhao Wenchao, L.J. Geerligs
Publikováno v: Energy Procedia. 27:610-616
This paper describes results of metal wrap through (MWT) cells produced from n-type Czochralski silicon wafers, and modules produced from those cells. The use of n-type silicon as base material allows for high efficiencies: for front emitter contacte
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eadb0cbe9c7b986119473f4d0542bafe
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7
Differences in Reverse Bias Voltage Behavior of n-type and p-type Multicrystalline Solar Cells
Autor: L.J. Geerligs, P. Barton, G. Coletti, Paula C. P. Bronsveld, P. Manshanden
Publikováno v: Silicon PV Conference, Leuven, 3-5 april 2012., 7 p.
The use of n-type, instead of p-type, silicon wafers for the production of mc-Si solar cells has a clear effect on the pre-breakdown behavior under reverse bias conditions. In p-type solar cells, material related breakdown patterns that are commonly
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98287615e058375af54bb532f051265a
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8
Improved phosphorous gettering of multicrystalline silicon
Autor: P. Manshanden, L.J. Geerligs
Publikováno v: Solar Energy Materials and Solar Cells. 90:998-1012
The gettering during an emitter diffusion in multicrystalline silicon is improved by adding a low-temperature tail to the standard diffusion. The tail keeps the emitter sheet resistance within the usable range for solar cells. An increase in minority
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cfce907cfa09f391f6e7e629abc88759
https://doi.org/10.1016/j.solmat.2005.05.015
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10
Electronic transport in monolayers of phthalocyanine polymers
Autor: Gerhard Wegner, L.J. Geerligs, Jin-Ming Wu, R. G. Miedema, Sander J. Tans, Dieter Neher, Cees Dekker
Publikováno v: Nanotechnology. 14:1043-1050
We report on a study of the electrical-transport properties of monolayers of phthalocyaninepolysiloxane (PcPS) polymers, and evaluate their potential fo ru se as molecular wires. Monolayers have been deposited with the Langmuir–Blodgett technique o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4934c1715fff5cf19949603f314b31b2
https://doi.org/10.1088/0957-4484/14/9/320
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