Zobrazeno 1 - 10
of 41
pro vyhledávání: '"L.H. Holway"'
Autor:
Jr. L.H. Holway
Publikováno v:
IEEE Transactions on Electron Devices. 37:1104-1110
A method for calculating C-V profiles by transforming the one-dimensional Poisson equation from a two-sided boundary value problem to an initial value problem is described. An analytic solution is used outside a reference plane deep in the substrate,
Autor:
Jr. L.H. Holway
Publikováno v:
IEEE Transactions on Electron Devices. 23:1304-1312
The current crowding due to the temperature dependence of avalanche breakdown is analyzed for the steady-state operation of an IMPATT diode mounted on a semi-infinite heat sink. The solution depends on a single new nondimensional number, the "Lambda"
Approximate formulas for the thermal resistance of IMPATT diodes compared with computer calculations
Autor:
M.G. Adlerstein, L.H. Holway
Publikováno v:
IEEE Transactions on Electron Devices. 24:156-159
Two analytical formulas, which allow the thermal resistance to be calculated approximately for layered heat sinks with finite radii, are presented. They are shown to agree closely with finite-difference computer solutions of the steady-state heat equ
Autor:
Jr. L.H. Holway
Publikováno v:
IEEE Transactions on Electron Devices. 24:80-86
The unstable growth of thermal filaments in a diode with a fixed bias current is calculated on the basis of a model which includes thermal conduction in the plane of the junction, as well as perpendicular to it. The growth time of the instability is
Autor:
L.H. Holway, S.L.G. Chu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 31:916-922
The derivation of the back bias voltage is shown to require carrying the derivation of the Read equation to one order of approximation higher than that which is necessary to obtain the quasi-static result. A new term is shown to be needed in the expr
Publikováno v:
IEEE Transactions on Electron Devices. 30:179-182
A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near
Autor:
Shiou Lung Chu, L.H. Holway
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 30:1933-1939
Measurements have been made of the oscillator characteristics when a GaAs EHF double-drift IMPATT diode designed for a frequency of 35 GHz is operated over an extended frequency range from 33-50 GHz. The diode which was designed for 35 GHz has a broa
Autor:
Jr. L.H. Holway
Publikováno v:
IEEE Transactions on Electron Devices. 27:433-442
The temperatures in a pulsed double-drift IMPATT diode are calculated as a function of position and time by a finite difference calculation using the alternating direction algorithm. The results are given as a function of pulse length and duty factor
Autor:
Jr. L.H. Holway
Publikováno v:
IEEE Transactions on Electron Devices. 26:991-993
An exact formula for a solution of the space-time partial differential equations is described for ionization coefficients which are constant in the avalanche zone. The solution, which exhibits a spatially varying conduction current, is exponentially
Autor:
L.H. Holway, J.A. Mullen
Publikováno v:
Proceedings of the IEEE. 64:380-381
The intensity spectrum for an FM signal modulated by a trapezoidal waveform is given in terms of Fresnel integrals. The numerical results, as observed with a finite resolution filter, are compared with the quasi-stationary model, which is asymptotica