Výsledky vyhledávání - "L.G. Quagliano"

Arsenic incorporation in InP epitaxial layers: a Raman scattering study

Autor: B. Jusserand, F. Mollot, D. Orani, L.G. Quagliano

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 2:824-828

We use Raman spectroscopy to investigate the interaction of epitaxial InP surfaces with arsenic during gas-source molecular beam epitaxy. The analysis of the Raman data reveals an arsenic incorporation due to phosphorus replacement by arsenic in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1eab4470311283e640304745bad3209
https://doi.org/10.1016/s1386-9477(98)00168-4

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Phonons in single thin epitaxial layers of InAs on InP

Autor: D. Orani, L.G. Quagliano, B. Jusserand

Publikováno v: Solid-State Electronics. 40:711-714

We have used Raman spectroscopy to investigate the vibrational properties of a series of single thin layers of InAs grown on (100) InP substrate by molecular beam epitaxy with a layer thikness between 3 and 9 monolayers. Sensitivity to thin layers, d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a58fcddf78ba0c906aa177fdadbba7c1
https://doi.org/10.1016/0038-1101(95)00348-7

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Raman spectroscopy of adsorbates on semiconductors by means of SERS effect

Autor: F.R. Ladan, L.G. Quagliano, B. Jusserand

Publikováno v: Physica Status Solidi (a). 152:219-225

An application of surface enhanced Raman scattering (SERS) to the surface characterization of semiconductors is reported by evaporating an Ag island film onto the surface of the materials. The surface sensitivity of the Raman effect at the metal surf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a92887d57b44c76787cac572444b3c1a
https://doi.org/10.1002/pssa.2211520122

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Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures

Autor: Saulius Kaciulis, M.G. Simeone, B. Jusserand, L.G. Quagliano, G. Mattogno, N. Tomassini, M.R. Bruni, N. Gambacorti

Publikováno v: Journal of crystal growth 150 (1995): 123–127. doi:10.1016/0022-0248(94)00953-8
info:cnr-pdr/source/autori:M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, L.G. Quagliano, N. Tomassini, B. Juserand/titolo:Role of the substrate deoxidation process in the growth of strained InAs%2FInP heterostructures/doi:10.1016%2F0022-0248(94)00953-8/rivista:Journal of crystal growth/anno:1995/pagina_da:123/pagina_a:127/intervallo_pagine:123–127/volume:150

We have investigated the role of the arsenic flux used during the substrate deoxidation process in the MBE (molecular beam epitaxy) growth of strained InAs/InP heterostructures. Two different experiments were performed: (i) thermal cleaning of the In

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee037342863a64cbced441e478a0c0de
https://doi.org/10.1016/0022-0248(95)80193-g

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'Integrated approach to a sensitive platform for sers aptamer biosensors, suitable for a microfluidic device'

Autor: I. Lamberti, A. Antoccia, C. Batocchio, G. Iucci, F. Duconge, M. Papi, L.G. Quagliano, S. Foglia

Publikováno v: Convegno Nazionale Sensori innovazione, attualità e prospettive, Roma, 2012
info:cnr-pdr/source/autori:I. Lamberti, A. Antoccia, C. Batocchio, G. Iucci, F. Duconge, M. Papi, L.G. Quagliano, S. Foglia/congresso_nome:Convegno Nazionale Sensori innovazione, attualità e prospettive/congresso_luogo:Roma/congresso_data:2012/anno:2012/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::94060289cbbd62bfb7783bd7582f2222
https://publications.cnr.it/doc/202304

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'Raman Study of Graphene Nanoribbonds Obtained by Solution Processing'

Autor: L.G. Quagliano, S. Foglia

Publikováno v: 23rd International Conference on Raman Spectroscopy, Bangalore, India, 12-17/08/2012
info:cnr-pdr/source/autori:L.G. Quagliano, S. Foglia/congresso_nome:23rd International Conference on Raman Spectroscopy/congresso_luogo:Bangalore, India/congresso_data:12-17%2F08%2F2012/anno:2012/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::e0e35f8e37fd4fc4f6a475728e002caf
https://publications.cnr.it/doc/202296

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Optical properties of nanocrystalline diamond in terahertz region

Autor: G. Speranza, S. Torrengo, L. Minati, L.G. Quagliano, M. Ortolani, A. Di Gaspare, D. Steimueller Nethl, S. Ghodbane, A. Chiasera, M. Ferrari

Publikováno v: 22nd European Conference on Diamond, Diamond-like Materials; Cabon Nanotubes and Nitrides, Garmish-Germany, 2011
info:cnr-pdr/source/autori:G. Speranza, S. Torrengo, L. Minati, L.G. Quagliano, M. Ortolani, A. Di Gaspare,D. Steimueller Nethl, S. Ghodbane, A. Chiasera, M. Ferrari/congresso_nome:22nd European Conference on Diamond, Diamond-like Materials; Cabon Nanotubes and Nitrides/congresso_luogo:Garmish-Germany/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::cc2b4c229deb42d1f8fd0b19606abf64
https://publications.cnr.it/doc/82028

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Surface enhanced Raman scattering from molecules adsorbed on semiconductor surfaces

Autor: F.R. Ladan, B. Jusserand, L.G. Quagliano, A. Izrael

Publikováno v: Journal of Electron Spectroscopy and Related Phenomena. :177-182

We have demonstrated that adsorbed species on semiconductor surface can be detected by SERS (Surface Enhanced Raman Scattering) spectroscopy. We have observed the vibrations of adsorbed molecules on semiconductors, onto which we have evaporated a thi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3eae237444f5f10ff35068c1f1195a17
https://doi.org/10.1016/0368-2048(93)80077-y

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Consistent density determination by Raman and photoluminescence experiments in completely confined e-h plasma in GaAs

Autor: L.G. Quagliano, Heinz Nather

Publikováno v: Solid State Communications. 50:75-78

The electron-hole plasma under 3-D carrier confinement is studied in GaAs by means of Raman scattering and photoluminescence measurements. We have demonstrated for the first time that under these well defined experimental conditions an excellent agre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13421bda6b0ec91b06c1b94d9f8c9e9c
https://doi.org/10.1016/0038-1098(84)90064-4

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High-excitation luminescence in direct-GAP GaAs1-xPx: E-H plasma expansion effects

Autor: Mario Guzzi, S. Modesti, Jl Staehli, L.G. Quagliano, A. Frova

Publikováno v: Journal of Luminescence. :581-584

The e-h plasma at 2 K in direct-gap GaAs1-xPx is studied for x=0.38. At high pumping levels an expansion of the plasma, directly observable through its luminescent emission, sets in when the excited particle density reaches the liquid density n∗⋍

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72a7f4fa77cc8b32961528deea276076
https://doi.org/10.1016/0022-2313(81)90045-4

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