Zobrazeno 1 - 10
of 31
pro vyhledávání: '"L.G. McCray"'
Autor:
Paul Hashimoto, P. Janke, Miroslav Micovic, L.G. McCray, A. Kurdoghlian, Jeong-Sun Moon, Chanh Nguyen, D. Wong
Publikováno v:
IEEE Transactions on Electron Devices. 48:591-596
In this work, we demonstrate state of the art performance of GaN HFETs grown on SiC by rf Nitrogen plasma assisted molecular beam epitaxy (MBE) at 10 and 20 GHz and good power scalability of these devices at 10 GHz. A single stage power amplifier bui
Autor:
Chanh Nguyen, W.-S. Wong, P. Janke, L.G. McCray, A. Kurdoghlian, Paul Hashimoto, Miroslav Micovic, Jeong-Sun Moon
Publikováno v:
IEEE Electron Device Letters. 23:637-639
We report low microwave noise performance of discrete AlGaN-GaN HEMTs at DC power dissipation comparable to that of GaAs-based low-noise FETs. At 1-V source-drain (SD) bias and DC power dissipation of 97 mW/mm, minimum noise figures (NF/sub min/) of
Autor:
R.A. Metzger, J. A. Henige, April S. Brown, Robert G. Wilson, T.V. Kargodorian, William E. Stanchina, L.G. McCray, M. Lui
Publikováno v:
Journal of Crystal Growth. 111:445-449
Al0.48In0.52As lattice matched to InP and grown by MBE over a temperature range of 250 to 100°C and under an As4 pressure of 1x10−6 to 2x10−5 Torr has been investigated. Over this temperature range of 250 to 100°C, resistivity decreases from 2x
Autor:
Joseph F. Jensen, William E. Stanchina, M.W. Pierce, R.A. Metzger, T.V. Kargodorian, Takyiu Liu, L.G. McCray
Publikováno v:
[1991] 49th Annual Device Research Conference Digest.
Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. Th
Autor:
Joseph F. Jensen, R.A. Metzger, Takyiu Liu, L.G. McCray, William E. Stanchina, P.F. Lou, M.W. Pierce
Publikováno v:
[1991] 49th Annual Device Research Conference Digest.
Autor:
C. Ngo, Ming Hu, D. Wong, Peter W. Deelman, L.G. McCray, Tahir Hussain, Miroslav Micovic, M. Antcliffe, Paul Hashimoto, Jeong-Sun Moon
Publikováno v:
60th DRC. Conference Digest Device Research Conference.
Most recent GaN-based HEMT technology has been focused toward microwave power applications. In this work, we report DC and RF characteristics of the first E-mode AlGaN/GaN HEMTs fabricated down to 0.2 /spl mu/m gatelength, and having an f/sub t/ reac
Autor:
W.W. Hooper, Lawrence E. Larson, D.A. Pierson, S.E. Rosenbaum, L.G. McCray, M.A. Thompson, C.S. Chou, Joseph F. Jensen, D.S. Deakin, M.J. Delaney
Publikováno v:
IEEE International Solid-State Circuits Conference.
Previous implementations of high-performance op amps in GaAs technology have been hindered by low transistor g/sub m/r/sub ds/, light sensitivity, and excessive backgating, which have limited gain and bandwidth. These limitations are overcome in the
Autor:
M.W. Pierce, April S. Brown, W.S. Hoefer, Joseph F. Jensen, L.G. McCray, R.E. Kastris, U.K. Mishra, David B. Rensch, T.V. Kargodorian
Publikováno v:
Technical Digest., International Electron Devices Meeting.
The authors report on the DC and RF performance of self-aligned Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs). The properties that make the AlInAs/GaInAs material system extremely attractive for HBTs
Autor:
R. Wong-Quen, Joseph F. Jensen, L.G. McCray, William E. Stanchina, F. Williams, M.W. Pierce, R.A. Metzger
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
The authors demonstrated the feasibility of a new technique for the monolithic fabrication of complementary heterostructure bipolar transistors (HBTs). The process led to coplanar npn and pnp HBTs, the first in the AlInAs/GaInAs material system, whic
Autor:
L.G. McCray, M. Wetzel, Miroslav Micovic, Jeong-Sun Moon, Paul Hashimoto, Tahir Hussain, W.-S. Wong, A. Kurdoghlian
Publikováno v:
Scopus-Elsevier
State-of-the-art noise performance of AlGaN/GaN HFETs in the 2-20 GHz frequency range for ultra low power operation of 10 mW (10 mA drain current and 1 V drain bias) is reported. A record low minimum noise figure (NF/sub min/) of 0.4 dB with 16 dB as