Zobrazeno 1 - 10
of 59
pro vyhledávání: '"L.F.Tz. Kwakman"'
Autor:
W. Moeller, Ehrenfried Zschech, M. Loeffler, J. Huang, J. J. L. Mulders, L.F.Tz. Kwakman, W.F. Van Dorp, Uwe Muehle
Publikováno v:
Ultramicroscopy. 184:52-56
A Ga focused ion beam (FIB) is often used in transmission electron microscopy (TEM) analysis sample preparation. In case of a crystalline Si sample, an amorphous near-surface layer is formed by the FIB process. In order to optimize the FIB recipe by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0bc078a3f065f1b6ccd2866afd2f197
https://doi.org/10.1016/j.ultramic.2017.10.011
https://doi.org/10.1016/j.ultramic.2017.10.011
Publikováno v:
Applied Surface Science. 255:1415-1418
Reliability and yield of nano-electronic devices can be seriously affected by the presence of surface contamination, even at low concentration. The microelectronics industry is, thus, in need for a quantitative, highly sensitive surface analysis tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75adc4e2c34b0480f882aa5bfbc93c2b
https://doi.org/10.1016/j.apsusc.2008.06.045
https://doi.org/10.1016/j.apsusc.2008.06.045
Autor:
C. Wyon, Sébastien Petitdidier, L.F.Tz. Kwakman, Lucile Broussous, X. Ravanel, C. Trouiller, Marc Juhel
Publikováno v:
Solid State Phenomena. 134:371-374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45321b60c057cd024660067ded3ce89a
https://doi.org/10.4028/www.scientific.net/ssp.134.371
https://doi.org/10.4028/www.scientific.net/ssp.134.371
Publikováno v:
Microelectronic Engineering. 64:91-98
In this communication, we used a modern analytical TEM-STEM fully equipped to carry out a complete physical and chemical study of Al/Ti/W/TiN interconnection evolution after 450 °C annealing. Using energy filtered TEM, compositional mapping, scannin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea59f19d23c0e9af52610570cb5f011
https://doi.org/10.1016/s0167-9317(02)00773-6
https://doi.org/10.1016/s0167-9317(02)00773-6
Publikováno v:
Microelectronics Reliability. 42:1747-1752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5652d9de15649856496fc6893811677
https://doi.org/10.1016/s0026-2714(02)00224-x
https://doi.org/10.1016/s0026-2714(02)00224-x
Publikováno v:
Applied Surface Science. 255:1440-1442
Recent time-of-flight secondary ion mass spectrometry studies using primary ion cluster sources such as Aun+, SF5+, Bin+ or C60+ have shown the great advantages in terms of secondary ion yield enhancement and ion formation efficiency of polyatomic io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee2a9881960a6a0ed219792b55d3224
https://doi.org/10.1016/j.apsusc.2008.06.155
https://doi.org/10.1016/j.apsusc.2008.06.155
Publikováno v:
Solid State Phenomena. :31-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5361769f30c0d10b4713089a4f5477f8
https://doi.org/10.4028/www.scientific.net/ssp.65-66.31
https://doi.org/10.4028/www.scientific.net/ssp.65-66.31
Publikováno v:
Applied Surface Science. 252:7211-7213
An epitaxial Si grown multi-layer stack consisting of boron delta-doped layers separated by 6.4 nm thick undoped films has been profiled using a Cameca IMS Wf magnetic SIMS. Using low energy oblique O 2 + beam, the boron depth resolution is improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5815f99ac4a247953a1b2fa21f77ff36
https://doi.org/10.1016/j.apsusc.2006.02.242
https://doi.org/10.1016/j.apsusc.2006.02.242
Publikováno v:
Applied Physics Letters. 85:651-653
Local convergent-beam electron diffraction (CBED) patterns have been acquired on focus ion beam prepared samples in order to determine the strain field generated by a NiSi layer in a n-MOS transistor. A broadening of the high order Laue zone lines in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2f43885e2602932c0d049bd0e9b8a8e
https://doi.org/10.1063/1.1774275
https://doi.org/10.1063/1.1774275
Autor:
Ernst Hendrik August Granneman, J.P. Joly, E.J. Lindow, L.F.Tz. Kwakman, J.C. Veler, F. Martin
Publikováno v:
Applied Surface Science. :629-633
Si 3 N 4 films were produced in an integrated vacuum processing system with separate modules for HF vapour etching, silicon thermal oxidation and LPCVD of Si 3 N 4 . It appears that the initial nucleation rate of the nitride growth depends strongly o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb3249b81b358f062d486222a9460c9f
https://doi.org/10.1016/0169-4332(93)90592-y
https://doi.org/10.1016/0169-4332(93)90592-y