Zobrazeno 1 - 10
of 1 012
pro vyhledávání: '"L.F. Eastman"'
Publikováno v:
International Journal of High Speed Electronics and Systems. 19:129-135
AlGaN / GaN heterojunction field effect transistors (HFETs) on sapphire substrates for power-switching applications have been fabricated. Design parameters such as source-gate spacing (Lsg), gate length (Lg), and gate width (Wg) have been varied to c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de595fc3172f1d11e2bd0b5556ecb72e
https://doi.org/10.1142/s0129156409006175
https://doi.org/10.1142/s0129156409006175
Autor:
L.F. Eastman, William J. Schaff, Wladek Walukiewicz, Xiaodong Chen, Joel W. Ager, D. Hao, Kin Man Yu, K. D. Matthews
Publikováno v:
International Journal of High Speed Electronics and Systems. 19:113-119
Plasma-assisted molecular beam epitaxial growth of Mg -doped GaN and InGaN on a sapphire substrate is investigated in this study. Electrical characteristics of p -type GaN strongly depend on the flux of Mg acceptors and the growth temperature. Only t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32ad75a87daa552e30fbf946118ae2ae
https://doi.org/10.1142/s0129156409006151
https://doi.org/10.1142/s0129156409006151
Publikováno v:
Semiconductor Science and Technology. 22:875-879
The ensemble Monte Carlo method is used to solve the Boltzmann equation for electrons together with the equation for phonons treated in the relaxation-time approximation. The effect of nonequilibrium longitudinal optical phonons on hot-electron energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0187e4d672e0ed4104853a344833f307
https://doi.org/10.1088/0268-1242/22/8/008
https://doi.org/10.1088/0268-1242/22/8/008
Publikováno v:
Semiconductor Science and Technology. 22:517-521
High-quality C-doped GaN buffers grown on sapphire substrates were employed for the fabrication of high-power AlGaN/GaN heterojunction field effect transistors (HFETs). The fabricated device exhibited a very high breakdown voltage (BV) over 1350 V an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee948574965b128d017595716e6cf39d
https://doi.org/10.1088/0268-1242/22/5/010
https://doi.org/10.1088/0268-1242/22/5/010
Autor:
William J. Schaff, James R. Shealy, L.F. Eastman, Brian K. Ridley, A. Brannick, N. A. Zakhleniuk
Publikováno v:
physica status solidi c. 4:651-654
In this paper we carry out detailed study and numerical modelling of the operation of the GaN/AlGaN High Electron Mobility Transistor (HEMT) with Field Plate (FP) optimisation. The FP has the effect of smoothing the potential gradient along the HEMT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019a637220069a5636e4456a4c1ad845
https://doi.org/10.1002/pssc.200673349
https://doi.org/10.1002/pssc.200673349
Publikováno v:
IEEE Transactions on Electron Devices. 53:2926-2931
An Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrates. In order to investigate the effects of an Fe-doped GaN buffer on OFF-state breakdown characteristics, HEMT devices with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8527914b2cd837efbf8779c718a8516
https://doi.org/10.1109/ted.2006.885679
https://doi.org/10.1109/ted.2006.885679
Publikováno v:
Journal of Electronic Materials. 35:406-410
Excellent ohmic characteristics for undoped-AlGaN/GaN heterostructures have been achieved by using a Si nano-interlayer: a 1-nm Si layer has been evaporated followed by Ti/Al/Mo/Au evaporation. A contact transfer resistance of 0.18 Ω-mm and a specif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b585dcfa5dddfc32cb9d4432cbadd17
https://doi.org/10.1007/bf02690526
https://doi.org/10.1007/bf02690526
Publikováno v:
IEEE Transactions on Electron Devices. 52:1940-1948
A novel silicon carbide (SiC) normally off lateral channel vertical junction field-effect transistor (LC-VJFET), namely a source-inserted double-gate structure with a supplementary highly doped region (SHDR), was proposed for achieving extremely low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8200a79ae16d4188f71bc07b5512663b
https://doi.org/10.1109/ted.2005.854278
https://doi.org/10.1109/ted.2005.854278
Autor:
L.F. Eastman, James R. Shealy, Nigel Klein, V. Tilak, S. V. Danylyuk, Svetlana Vitusevich, V. Kaper
Publikováno v:
physica status solidi (c). 2:2615-2618
AlGaN/GaN high electron mobility transistor (HEMT) heterostructures were investigated by noise spectral density measurements. The heterostructure layers are grown without intentionally doping the barrier material and two-dimensional gas appears at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2a8cd92ce2ee77cb60b8938a330e43c
https://doi.org/10.1002/pssc.200461457
https://doi.org/10.1002/pssc.200461457
Autor:
Arvydas Matulionis, J. Liberis, A. Vertiatchikh, M. Ramonas, Xiaodong Chen, L.F. Eastman, I. Matulionien, Y. J. Sun
Publikováno v:
physica status solidi (c). 2:2585-2588
Dependence of hot-electron noise temperature on supplied electric power is measured at room temperature for an AlGaN/AlN/GaN channel with a two-dimensional electron gas (1 × 1013 cm–2). The results are interpreted in an electron-temperature approx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df67b77575ed5ff29f29b2ac2fa43806
https://doi.org/10.1002/pssc.200461374
https://doi.org/10.1002/pssc.200461374