Zobrazeno 1 - 10
of 43
pro vyhledávání: '"L.E. Dickens"'
Autor:
L.E. Dickens, D.W. Maki
Publikováno v:
MTT-S International Microwave Symposium Digest.
GaAs Schottky Barrier diodes with a zero bias cutoff frequency of 800 GHz have been used in an integrated circuit balanced mixer operating with a signal frequency centered at 12 GHz and an IF of 70 MHz. L/sub c/ at centerband was 2.2 dB. For an LO tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3b7e8a19774ef123877b9320f783b4
https://doi.org/10.1109/mwsym.1975.1123313
https://doi.org/10.1109/mwsym.1975.1123313
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A hybrid-coupled phase shifter has been fabricated monolithically using reverse-biased Schottky varactor diodes to continuously vary phase with an analog control voltage. A phase shift of 105° is obtained at X-Band, and wtth design improvements a ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe99274c698ea0c63c2144d83272c23
https://doi.org/10.1109/mcs.1984.1113616
https://doi.org/10.1109/mcs.1984.1113616
Publikováno v:
1993 IEEE MTT-S International Microwave Symposium Digest.
An effort was made to develop a high-efficiency N-way combining scheme consistent with the physical geometries associated with X- and Ku-band active apertures. A 12-way combiner using stripline serial feed networks in low-temperature cofired ceramic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b80f18be5947234877275a7a99b86dda
https://doi.org/10.1109/mwsym.1993.276743
https://doi.org/10.1109/mwsym.1993.276743
Publikováno v:
Proceedings of 1994 IEEE Electrical Performance of Electronic Packaging.
This paper describes the design, fabrication and test of a compact multilayer stripline 8-14 GHz 6-way combining network using Low Temperature Cofired Ceramic (LTCC). The design evolved through circuit modeling and EM field simulation and features th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0071d3ef4749e59fe8c24e00fbaf6b
https://doi.org/10.1109/epep.1994.594129
https://doi.org/10.1109/epep.1994.594129
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
A compact coupler network for combining six high efficiency HBT power MMICs has demonstrated an 82% minimum combining efficiency (0.85 dB), typically greater than 87% (0.6 dB), over an 8.0 to 14.0 GHz frequency band. The combining network is a two-ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::352d8f10ad6d894002797681a8b21662
https://doi.org/10.1109/mwsym.1995.406278
https://doi.org/10.1109/mwsym.1995.406278
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
Six 2 Watt AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) MMIC amplifiers have been combined using low loss, low temperature cofired ceramic (LTCC) splitting and combining networks. The six MMIC amplifiers were combined in a compact, testable, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a67f639fb2941485d475559b35c327b
https://doi.org/10.1109/mwsym.1995.405977
https://doi.org/10.1109/mwsym.1995.405977
Publikováno v:
IEEE Transactions on Electron Devices. 31:1068-1071
Microwave f T measurements were made and compared to a model that confirmed lateral spreading as proposed by Wemple et al. to explain the increased breakdown voltage of GaAs power FET's compared to bulk breakdown. The model provides a useful tool for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5beb1894f4b71446f3d71f32eca705b1
https://doi.org/10.1109/t-ed.1984.21662
https://doi.org/10.1109/t-ed.1984.21662
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 30:2194-2200
A development effort is described that yielded a compact broad-band ECM module using soft and hard substrate material employing microstrip, slotline, and coplanar line. Integrated functions include coupling, limiting, upconversion, downconversion, br
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33de4e6da8beb53260bd0061d541323e
https://doi.org/10.1109/tmtt.1982.1131407
https://doi.org/10.1109/tmtt.1982.1131407
Autor:
L.E. Dickens, D.W. Maki
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 23:276-281
GaAs Schotty-barrier diodes with a zero-bias cutoff frequency of 800 GHz have been used in an integrated-circuit balanced diode mixer operating with a signal frequency centered at 9.3 GHz and a local-oscillator (LO) frequency at 7.8 GHz. For an insta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a414f37449f2afefae7287a2444b31
https://doi.org/10.1109/tmtt.1975.1128548
https://doi.org/10.1109/tmtt.1975.1128548
Autor:
L.E. Dickens
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 15:101-109
The equivalent circuit applicable to most semiconductor diodes contains a term R/sub s/ called the spreading resistance which is a very critical parameter of any diode. In a mixer diode, R/sub s/ limits the conversion efficiency and increases the noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c7da01e4cdbb3bc33c74fbc08c829b
https://doi.org/10.1109/tmtt.1967.1126383
https://doi.org/10.1109/tmtt.1967.1126383