Zobrazeno 1 - 10
of 50
pro vyhledávání: '"L.D. Reynolds"'
Publikováno v:
Physical Review E. 52:2999-3009
Relative radial concentration profiles of atomic hydrogen in an atmospheric-pressure argon-hydrogen free-burning 200-A arc discharge were measured using laser-induced fluorescence by two-photon excitation of the ground state of atomic hydrogen. Radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::191ba8732f3a9d520706d02c5b6270bd
https://doi.org/10.1103/physreve.52.2999
https://doi.org/10.1103/physreve.52.2999
Publikováno v:
Journal of Quantitative Spectroscopy and Radiative Transfer. 46:119-124
Gas temperatures were determined at four radial positions in the fringe of an atmospheric pressure argon plasma jet. The gas temperature was calculated from lineshapes obtained by analyzing the Rayleigh-Brillouin scattered laser light with a scanning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9bfc2fb70fd2cca10924765191bc73d
https://doi.org/10.1016/0022-4073(91)90087-7
https://doi.org/10.1016/0022-4073(91)90087-7
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A monolithic transmit-receive GaAs FET switch capable of switching more than 10 W CW power with about 1 dB insertion loss and 26 dB isolation at X-band frequencies is reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbb0a5bc4dcc61743ba51678b07f3c4
https://doi.org/10.1109/mcs.1982.1112178
https://doi.org/10.1109/mcs.1982.1112178
Publikováno v:
MTT-S International Microwave Symposium Digest.
X-band GaAs MMIC passive phase shifters have been developed using FET switches. A four-bit digital phase shifter with 5.1 +- 0.6 dB insertion loss has been realized on a single 6.4 x 7.9 x 0.1 mm chip.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fac8bf0e25d03625ffa25073e74ba83
https://doi.org/10.1109/mwsym.1982.1130765
https://doi.org/10.1109/mwsym.1982.1130765
Autor:
M.S. Wang, L.D. Reynolds
Publikováno v:
IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.
In order to realize the low product cost potential of a single-chip FM-CW radar MMIC (monolithic microwave integrated circuit), an innovative production testing concept is developed in which the complete transmit/receive transfer function is verified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5df4a2f24e8007b606356ee8febec50
https://doi.org/10.1109/mcs.1991.148075
https://doi.org/10.1109/mcs.1991.148075
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 32:290-295
Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58e7f4fa60138161ae970f146b9a9bbf
https://doi.org/10.1109/tmtt.1984.1132667
https://doi.org/10.1109/tmtt.1984.1132667
Publikováno v:
IEEE Transactions on Electron Devices. 29:1072-1077
This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and ± 1-dB gain flatness in the 1-13-GHz frequency range. The circuit is realized in monolithic form on a 0.1-mm GaAs substrate with 50-Ω input and output lines. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43af68254cc11ebc7158558795843621
https://doi.org/10.1109/t-ed.1982.20836
https://doi.org/10.1109/t-ed.1982.20836
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 30:976-981
This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and +-1-dB gain flatness in the 1-13-GHz frequency range. The circuit is realized in monolithic form on a 0.1-mm GaAs substrate with 50-Omega input and output lines. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2acfc56a522e0629133e5624d83e6ef1
https://doi.org/10.1109/tmtt.1982.1131186
https://doi.org/10.1109/tmtt.1982.1131186
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 32:71-77
Single-stage and two-stage GaAs traveling-wave amplifiers operating with flat gain responses in the 2-20-GHz frequency range are described. The circuits are realized in monolithic form on a 0.1-mm GaAs substrate with 50-Omega input and output lines.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c5e685049ce0de75d3309d58dcb451
https://doi.org/10.1109/tmtt.1984.1132614
https://doi.org/10.1109/tmtt.1984.1132614
Publikováno v:
Electronics Letters. 18:596
A two-stage monolithic GaAs travelling-wave amplifier operating in the 2-20 GHz frequency range with 12 dB flat gain is reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f042971f0202180fde9fc469c4480f52
https://doi.org/10.1049/el:19820409
https://doi.org/10.1049/el:19820409