Zobrazeno 1 - 10
of 57
pro vyhledávání: '"L.C.T. Liu"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:477-484
A double-balanced (DB) 3-18 GHz and a single-balanced (SB) 2-16 GHz resistive HEMT monolithic mixer have been successfully developed. The DB mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO balun, and two passive baluns for RF and IF. At 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef2eaf89c71dfe2205ee2d1aab8f9bd4
https://doi.org/10.1109/22.372088
https://doi.org/10.1109/22.372088
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:1980-1986
The design and fabrication of four broadband monolithic passive baluns including CPW Marchand, multilayer MS Marchand, planar-transformer and broadside-coupled line baluns are presented. Operational frequencies range from 1.5 GHz to 24 GHz. Maximum r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0404cdf60e85c258f30e720f80a574c5
https://doi.org/10.1109/22.106536
https://doi.org/10.1109/22.106536
Autor:
G.S. Dow, L.C.T. Liu, D. Garske, K.L. Tan, S.B. Bui, J. Berenz, T.H. Chen, K.W. Chang, Huei Wang, T.N. Ton, T.S. Lin
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:1972-1979
The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7acf6a6562c491aa0243713ba2029cc
https://doi.org/10.1109/22.106535
https://doi.org/10.1109/22.106535
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:1389-1394
A Q-band balanced, resistive high-electron-mobility-transistor (HEMT) mixer has been developed for integration in monolithic millimeter-wave receivers. The mixer consists of two AlGaAs/GaAs HEMTs, a coplanar-waveguide (CPW)-to-slotline local oscillat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6af6cb931aadf48b8bad2503a4922d
https://doi.org/10.1109/4.90092
https://doi.org/10.1109/4.90092
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A monolithic oscillator was fabricated using conventional planar FET technology. The active device used was a 0.35x60 micron FET fabricated on an active layer formed by ion implantation into an undoped VPE buffer layer. Frequency stability is achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23596e79c0d673e37f3ce099e971ed10
https://doi.org/10.1109/mcs.1984.1113605
https://doi.org/10.1109/mcs.1984.1113605
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa7017df230e7bc12cb39af10f805166
https://doi.org/10.1109/mcs.1986.1114492
https://doi.org/10.1109/mcs.1986.1114492
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b17ce2aa57c24cf8dba180d40051b1fb
https://doi.org/10.1109/mcs.1986.1114480
https://doi.org/10.1109/mcs.1986.1114480
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A production technology for high yield and high performance MMIC's has been developed. Two stage X-band power amplifier and low noise amplifiers were used as test vehicles in this producibility study. The power amplifier chips have consistently demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d824720b04bccb8064f1584b5c4a0b7a
https://doi.org/10.1109/mcs.1985.1113636
https://doi.org/10.1109/mcs.1985.1113636
Publikováno v:
IEEE Military Communications Conference, 'Bridging the Gap. Interoperability, Survivability, Security'.
Two different types of HEMT (high-electron-mobility transistor) monolithic low-noise amplifiers (LNAs) using AlGaAs/GaAs and pseudomorphic InGaAs/GaAs materials have been developed and have demonstrated excellent performance at 60 GHz. These monolith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73eed5eb40644444f88ef2fc4bdbb6fc
https://doi.org/10.1109/milcom.1989.104021
https://doi.org/10.1109/milcom.1989.104021
Publikováno v:
11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.
Five different types of high-electron-mobility transistor (HEMT) low-noise amplifiers (LNAs) utilizing AlGaAs/GaAs and pseudomorphic InGaAs/GaAs materials have been designed for 60-GHz military electronic warfare and communication applications and ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33815d73f4b395b5776f8f803c33f911
https://doi.org/10.1109/gaas.1989.69302
https://doi.org/10.1109/gaas.1989.69302