Zobrazeno 1 - 10
of 18
pro vyhledávání: '"L.C. Phinney"'
Autor:
Linda Höglund, Gary W. Wicks, Arezou Khoshakhlagh, Terry Golding, Khalid Hossain, David Z. Ting, Sarath D. Gunapala, A. Soibel, L.C. Phinney
Publikováno v:
Journal of Electronic Materials. 45:5626-5629
Two hydrogenation techniques were used to passivate defects in InAs/InAsSb superlattices: UV-photon assisted hydrogenation with and without DC bias enhancement. The effects of the hydrogenation on the minority carrier lifetime were studied using phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9a782ab48dc4935d7e4b70c2a893100
https://doi.org/10.1007/s11664-016-4617-z
https://doi.org/10.1007/s11664-016-4617-z
Autor:
Khalid Hossain, Chintalapalle V. Ramana, O.R. Nunez, A.J. Moreno Tarango, L.C. Phinney, Neil R. Murphy
Publikováno v:
Thin Solid Films. 596:160-166
Tungsten oxynitride (W–O–N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W–O–N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8de14e45f9b7aa76f32d228ad178494b
https://doi.org/10.1016/j.tsf.2015.08.066
https://doi.org/10.1016/j.tsf.2015.08.066
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 332:286-289
The dependences of the total sputtering yield of Bi and the differential angular distribution of these sputtered Bi atoms on the fluence of 50 keV Ar + ions at normal incidence have been experimentally measured. Polycrystalline Bi targets were used f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34a613e9970188da7676bb07a154c54d
https://doi.org/10.1016/j.nimb.2014.02.079
https://doi.org/10.1016/j.nimb.2014.02.079
Autor:
Khalid Hossain, Floyd D. McDaniel, L.J. Mitchell, E.B. Smith, P. Paudel, F.U. Naab, O.W. Holland, L.C. Phinney, Jerome L. Duggan, Mangal Dhoubhadel
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 261:669-673
An initial study was performed on the feasibility of forming Ru 2 Si 3 nanocrystals using an implantation and oxidation technique. Silicon (1 0 0) was implanted with Ru − ions at a fluence of 1.0 × 10 17 atoms/cm 2 at an energy of 45 keV. The impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::815bd9d39b132e9e3ba70b56e3f788e4
https://doi.org/10.1016/j.nimb.2007.03.045
https://doi.org/10.1016/j.nimb.2007.03.045
Autor:
P.R. Poudel, Duncan L. Weathers, Floyd D. McDaniel, L.R. Burns, L.C. Phinney, L.J. Mitchell, Khalid Hossain, Jerome L. Duggan, E.B. Smith
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 261:627-629
An MeV energy beam line for ion implantation of carbon and silicon to fashion optically-active nanocrystals has been constructed at the Ion Beam Modification and Analysis Laboratory at the University of North Texas (UNT). The implantation line is at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::569614d9b09bfa6b6ecb501eb2cf0206
https://doi.org/10.1016/j.nimb.2007.04.241
https://doi.org/10.1016/j.nimb.2007.04.241
Autor:
Tetsuya Mishima, Khalid Hossain, Mukul C. Debnath, L.C. Phinney, Michael B. Santos, Terry Golding
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:02C116
InSb epilayers and InSb/Al0.20In0.80Sb quantum wells (QWs) were grown on 4°-off-axis Ge-on-insulator (GeOI) substrates by molecular beam epitaxy. An initial AlSb nucleation was found to be important for achieving good crystalline quality. For a 4.0-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c213b41d22b66d4c66185b96e6cc73
https://doi.org/10.1116/1.4866397
https://doi.org/10.1116/1.4866397
Autor:
Jerome L. Duggan, L.C. Phinney, F U Naab, Duncan L. Weathers, Gregory Lapicki, Floyd D. McDaniel
Publikováno v:
Journal of Physics B: Atomic, Molecular and Optical Physics. 45:035205
The M-shell x-ray production cross sections for thorium and uranium have been measured for carbon ions with energies from 4.5 to 11.3 MeV with the charge state q increasing from 2 to 4, and oxygen ions with energies from 4.5 to 13.5 MeV with the char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::723d8b2440d6d0f6626c41bc302bc08e
https://doi.org/10.1088/0953-4075/45/3/035205
https://doi.org/10.1088/0953-4075/45/3/035205
Publikováno v:
Journal of Physics B: Atomic, Molecular and Optical Physics. 42:085202
M-shell x-ray production cross sections for thorium and uranium have been determined for protons of energies 0.4–4.0 MeV and helium ions of energies 0.4–6.0 MeV. The M-shell line and total M-shell x-ray production cross sections are compared to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64592d8c1c80e98ccb5fcd715b88c21c
https://doi.org/10.1088/0953-4075/42/8/085202
https://doi.org/10.1088/0953-4075/42/8/085202
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Akademický článek
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