Zobrazeno 1 - 10
of 118
pro vyhledávání: '"L.A. Larson"'
Autor:
L.A. Larson, D.F. Dal Porto
Publikováno v:
SPE Production & Facilities. 12:159-164
Summary This paper presents the results of two multiphase-pump field trials. One field trial was conducted offshore on a platform in the Gulf of Mexico (GOM). It is a low-pressure boost (100 psi) application involving gas-lifted wells. The other fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697540f3c59b53e2769cba9a81c9b330
https://doi.org/10.2118/36590-pa
https://doi.org/10.2118/36590-pa
Autor:
L.A. Larson, T.E. Seidel
Publikováno v:
MRS Bulletin. 17:34-39
This article describes the current status of implantation in silicon for ion doses up to but not including the onset of the amorphous state. Physical phenomena, applications to VLSI, and equipment issues are discussed and linked from the viewpoint of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f343b645dd5cea35e72c3088d08e37e
https://doi.org/10.1557/s0883769400041440
https://doi.org/10.1557/s0883769400041440
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:109-114
The safety and environmental concerns regarding the widespread use of phosphine and arsine gas in the semiconductor industry have given rise to the use of alternative, less hazardous replacement substances, such as tertiarybutylphosphine (TBP) and te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cb7a33712aa9cefbfb845d6dfce093d
https://doi.org/10.1016/0168-583x(91)96146-c
https://doi.org/10.1016/0168-583x(91)96146-c
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:166-172
The uniformity of ion implantation across a chip is becoming more important as the density of devices on a chip increases and the matching tolerance of device parameters across a chip decreases and becomes more critical. In order to investigate ion-i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3472aeb20757ff69002fdf980cdb547c
https://doi.org/10.1016/0168-583x(91)96155-e
https://doi.org/10.1016/0168-583x(91)96155-e
Autor:
L.A. Larson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:132-136
This paper is a review of current work to improve particulate control in ion implantation equipment. The first section includes current published research work which will be outlined and summarized. The second section focusses on work performed at Na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e0c322c9a646b7df4d286324ff4b6e
https://doi.org/10.1016/0168-583x(91)96149-f
https://doi.org/10.1016/0168-583x(91)96149-f
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:275-280
The Greater Silicon Valley Implant Users Group (GSVIUG) has been working with the American Society for Testing Materials (ASTM) and the National Institute of Standards and Technology (NIST, previously known as NBS) to develop a standard for ion impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4487ae98f04a5665a5c22193bb8e3d3c
https://doi.org/10.1016/0168-583x(91)96177-m
https://doi.org/10.1016/0168-583x(91)96177-m
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:235-242
In the early days of semiconductor manufacturing, the four-point probe became established as the tool-of-choice for monitoring diffusion processes. The application of the four-point probe to ion implantation in the early 1960s was basically limited t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ad018574039d7631b5157a37e6d2e17
https://doi.org/10.1016/0168-583x(91)96169-l
https://doi.org/10.1016/0168-583x(91)96169-l
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:593-597
Multi-step implants using F as a preamorptuzing species for the formation of shallow p + source/drain junctions are investigated. SIMS, RBS and SRP data are combined to optimize process equivalents to 50 and 25 keV BF 2 implants. Incorporation of a d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5275189ff700594e134dfc5d8dea073d
https://doi.org/10.1016/0168-583x(91)96238-g
https://doi.org/10.1016/0168-583x(91)96238-g
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
The National Technology Roadmap for Semiconductors calling for shallow junctions drives the exploration of alternate doping technologies, one of which is plasma doping (PLAD). There are many important issues when evaluating these technologies, but tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e62eee963a853737461728c674e09d2
https://doi.org/10.1109/iit.1998.813917
https://doi.org/10.1109/iit.1998.813917
Autor:
Hiroyuki Hagiwara, W. Lee Smith, Tohru Hara, Ryuji Ichikawa, C. G. Welles, Sookap Hahn, L.A. Larson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:250-252
Monitoring of dose by thermal wave (TW) modulated reflection is investigated for As+ or B+ implantation into silicon at low doses (5 × 1010 to 1 × 1013 cm−2) employed in the threshold voltage control of a MOS transistor. This method is shown to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a620c172d048fd16744ce9acfbbcae8
https://doi.org/10.1016/0168-583x(91)96171-g
https://doi.org/10.1016/0168-583x(91)96171-g