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of 77
pro vyhledávání: '"L.A. Ivashchenko"'
Autor:
A. O. Kozak, V.S. Manzhara, O. K. Sinelnichenko, L.A. Ivashchenko, R.V. Shevchenko, V.I. Ivashchenko, O. K. Porada
Publikováno v:
International Journal of Hydrogen Energy. 47:7263-7273
The structure, chemical bonding and photoemission of amorphous hydrogenated silicon carbonitride (a-SiCN:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as a main precursor at different hydrogen flow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b8b83268d7166cf5af53d003d2bce7
https://doi.org/10.1016/j.ijhydene.2021.01.090
https://doi.org/10.1016/j.ijhydene.2021.01.090
Akademický článek
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Publikováno v:
Computational Condensed Matter. 33:e00762
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ffd19a28dd862e1dfe2fee3d0cb250
https://doi.org/10.1016/j.cocom.2022.e00762
https://doi.org/10.1016/j.cocom.2022.e00762
Autor:
L.A. Ivashchenko, Jerzy Leszczynski, Leonid Gorb, Volodymyr Ivashchenko, Patrice E. A. Turchi, V.I. Shevchenko
Publikováno v:
Materials Chemistry and Physics. 275:125178
First-principles calculations were carried out to study the hypothetical MoC, Mo2C, Mo3C2 and random MoCx, x = 1.0, 0.875, 0.75 and 0.5 phases, and those that were experimentally verified, as well as the random cubic and hexagonal TiC–MoC and cubic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea4b138813f5bea0c24a176d47c7289
https://doi.org/10.1016/j.matchemphys.2021.125178
https://doi.org/10.1016/j.matchemphys.2021.125178
Autor:
V.S. Manzhara, A. O. Kozak, O. K. Porada, V.I. Ivashchenko, P.L. Scrynskyy, L.A. Ivashchenko, Tamara Tomila
Publikováno v:
Applied Surface Science. 425:646-653
This paper reports on the results of comparative investigations of Si-C-N films prepared by using both plasma enhanced chemical vapor deposition (PECVD) and DC magnetron sputtering (MS) at different nitrogen flow rates (F N2 ). The films were charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767b10ac63f28baf3620c0e493917415
https://doi.org/10.1016/j.apsusc.2017.06.332
https://doi.org/10.1016/j.apsusc.2017.06.332
Publikováno v:
2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP).
Si-C-N thin films were deposited on glass and silicon substrates by plasma-enhanced chemical vapor deposition using hexamethyldisilazane as the main precursor. The optoelectronic properties of the films deposited at different substrate temperature we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61fd40737bb2dbf6b2df536f76f444c8
https://doi.org/10.1109/nap.2017.8190162
https://doi.org/10.1109/nap.2017.8190162
Autor:
V.J. Malakhov, A. O. Kozak, O. S. Lytvyn, O. K. Sinelnichenko, L.A. Ivashchenko, Volodymyr Ivashchenko, O. K. Porada, Tamara Tomila
Publikováno v:
Thin Solid Films. 569:57-63
Silicon carbon nitride (SiCN) thin films were deposited by plasma-enhanced chemical vapor deposition using hexamethyldisilazane at different nitrogen flow rates. Films were investigated by an atomic force microscope, X-ray diffraction spectroscopy, F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::991a725b09c89e690e8c7080259ba32f
https://doi.org/10.1016/j.tsf.2014.08.027
https://doi.org/10.1016/j.tsf.2014.08.027
Publikováno v:
Metallurgical and Materials Transactions A. 37:3391-3396
We have carried out numerical ab initio calculations of the elastic constants for several cubic ordered structures modeling titanium carbonitride (TiCxN1−x) alloys. The calculations were performed using the full-potential linear augmented plane-wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3500c8c93a2459cc4a17109e768807f
https://doi.org/10.1007/s11661-006-1031-9
https://doi.org/10.1007/s11661-006-1031-9
Autor:
A.I. Stegniy, L.A. Ivashchenko, P.L. Skrynskyy, O. K. Porada, Sergey Dub, Volodymyr Ivashchenko
Publikováno v:
Surface and Coatings Technology. 200:6533-6537
PECVD amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been deposited from methyltrichlorosilane (MTCS) onto (100) Si substrates varying a substrate temperature ( T S ) from 200 to 600 °C. The use of MTCS as a precursor allows us to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55810baf4ed17099e607d4fd85d2c9a7
https://doi.org/10.1016/j.surfcoat.2005.11.087
https://doi.org/10.1016/j.surfcoat.2005.11.087
Autor:
L.A. Ivashchenko, Patrice E. A. Turchi, G. V. Rusakov, Volodymyr Ivashchenko, V. I. Shevchenko
Publikováno v:
Journal of Physics: Condensed Matter. 15:4119-4126
The atomic and electronic properties of amorphous unhydrogenated (a-SiC) and hydrogenated (a-SiC:H) silicon carbides are studied using an sp3s tight-binding force model with molecular dynamics simulations. The parameters of a repulsive pairwise poten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c1d342c52e84caf9c6d0148d31fb7f
https://doi.org/10.1088/0953-8984/15/24/305
https://doi.org/10.1088/0953-8984/15/24/305