Zobrazeno 1 - 10
of 35
pro vyhledávání: '"L.-M. Buchmann"'
Autor:
L. M. Buchmann
Publikováno v:
Microelectronic Engineering. 27:335-338
Ion species of different mass and energy show dissimilar penetration depth in matter. This effect gives rise to pattern formation at different heights of an ion-sensitive resist by applying ion projection lithography. Originating from an open stencil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99578a571d624dcdb83bb24d06fb6759
https://doi.org/10.1016/0167-9317(94)00119-f
https://doi.org/10.1016/0167-9317(94)00119-f
Publikováno v:
Microelectronic Engineering. 17:245-248
By applying ion projection lithography an SAW device with 0.3 μm lines and spaces has been printed on a quartz substrate. The problem of complementary masks connected with the use of open stencil masks was solved in this special situation of a linea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::736f60b41cbc4e71b9b6db0ea9a2c834
https://doi.org/10.1016/0167-9317(92)90049-w
https://doi.org/10.1016/0167-9317(92)90049-w
Publikováno v:
Microelectronic Engineering. 13:353-356
Silicon open stencil masks, realized in a 2 μm thick membrane, were investigated with respect to their stress quality, the resistivity against sputter erosion by ion impingement and their response to temperature variations. In a test pattern of an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91ba8242344f9d3a7cc26284955d4050
https://doi.org/10.1016/0167-9317(91)90110-y
https://doi.org/10.1016/0167-9317(91)90110-y
Publikováno v:
Journal of Applied Physics. 67:3635-3640
The behavior of CF2 radicals in CF4/O2 plasmas has been studied as a function of the oxygen partial pressure in an rf reactor with 13.56 MHz, 30 W, and 40 mTorr total pressure. The CF2 ground and excited states were detected by the CF2 (A‐X) band s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1f5a0959bd75aa0e281bbbda17b22fd
https://doi.org/10.1063/1.345317
https://doi.org/10.1063/1.345317
Autor:
Walter Finkelstein, Gerhard Stengl, W. H. Bruenger, John Melngailis, Hans Loeschne, Ivan Berry, Robert W. Hill, L.‐M. Buchmann, John N. Randall, Lloyd R. Harriott, John C. Wolfe
Publikováno v:
Scopus-Elsevier
Ion projection lithography (IPL) is analogous to an optical wafer stepper except the exposing photons have been replaced by high energy, light ions. In the IPL machine being developed by the Advanced Lithography Group (ALG), a silicon stencil mask is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aae4ab0958ef6284c6f9c0daeeb0af48
https://doi.org/10.1117/12.175827
https://doi.org/10.1117/12.175827
X-ray and ion projection lithography use membrane-based masks for the fabrication of microstructures with linewidths below 0.5 μm. To minimize pattern distortions during mask fabrication and under operating conditions, membranes with a high mechanic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2239d4f716b0a7dc66ecc95ba0712c31
https://publica.fraunhofer.de/handle/publica/182742
https://publica.fraunhofer.de/handle/publica/182742
For repairing clear defects on lithography masks of the open stencil type, physical holes have to be filled with absorber material. The deposition, therefore, has to start on an existing structure, followed by a lateral growth into the open gap. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::644ea2d0f93dcc0962aa6485a4f07898
https://publica.fraunhofer.de/handle/publica/181938
https://publica.fraunhofer.de/handle/publica/181938
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2355
The positive tone deep ultraviolet resist UV II HS-0.6 (Shipley) has been evaluated for ion exposure in the ion projector at the Fraunhofer Institute in Berlin. The chemically amplified resist showed extremely high sensitivity of 1×1012 H+ ions/cm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3424f1414ea2924fdba3b01e2477a9
https://doi.org/10.1116/1.589645
https://doi.org/10.1116/1.589645
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:3924
A positive tone photo resist HPR 506 (Olin Microelectronic Materials) has been investigated for its performance under ion exposure. Experiments have been conducted with light ions (H+ and He+) in the ion projector IPLM 02 (IMS; Vienna) at an energy o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f7e9dad80ec0e1e1fcac005fc09bbb2
https://doi.org/10.1116/1.588696
https://doi.org/10.1116/1.588696
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2561
Damage in thin (10 nm) oxide layers of metal–oxide–semiconductor varactor cells caused by exposures with ions, electrons, and x rays has been electrically characterized by constant‐current stress time‐dependent dielectric breakdown and capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d34818da092f83127488fe35b36ab73c
https://doi.org/10.1116/1.588394
https://doi.org/10.1116/1.588394