Zobrazeno 1 - 10
of 75
pro vyhledávání: '"L. le Gouezigou"'
Autor:
L. le Gouezigou, Francois Lelarge, L. Le Gouezigou, Frederic Pommereau, Francis Poingt, J. Renaudier, J.L. Oudar, Ch. Gosset, Alexandre Shen, G-H Duan
Publikováno v:
2006 European Conference on Optical Communications.
Monolithic quantum dot Fabry-Perot laser diodes are fabricated and characterized for ultra-stable clock signal generation. Pulse width of 7ps and electrical line-width as narrow as 2 kHz are obtained.
Autor:
Beatrice Dagens, P. Resneau, O. Le Gouezigou, Alain Accard, G-H Duan, J.-G. Provost, L. Le Gouezigou, Michel Calligaro, Frederic Pommereau, C. Dernazaretian, B. Rousseau, M. Carbonnelle, Michel Krakowski, F. van Dijk, Dalila Make, Francis Poingt, Francois Lelarge
Publikováno v:
IEEE Photonics Technology Letters. 20:903-905
The modulation bandwidth has been identified as a specific limitation of quantum-dot or quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel injection and p-doping have already been demonstrated to increase the modula
Publikováno v:
Applied Physics Letters. 80:547-549
We propose and demonstrate improved designs in order to increase the transmission level through double 60°-bend photonic-crystal-based waveguides. These bends are defined in a two-dimensional photonic crystal (PC) patterned into a GaInAsP slab on In
Autor:
O. Le Gouezigou, Francis Poingt, Francois Lelarge, S. Ginestar, L. Le Gouezigou, Frederic Pommereau, G-H Duan, Alain Accard, Jean Landreau, Jean-Pierre Vilcot, B. Rousseau, F. van Dijk
Publikováno v:
European Physical Journal: Applied Physics
European Physical Journal: Applied Physics, 2011, 53 (3), pp.33609-1-5. ⟨10.1051/epjap/2011100065⟩
European Physical Journal: Applied Physics, EDP Sciences, 2011, 53, pp.33609-1-5. ⟨10.1051/epjap/2011100065⟩
European Physical Journal: Applied Physics, EDP Sciences, 2011, 53 (3), ⟨10.1051/epjap/2011100065⟩
European Physical Journal: Applied Physics, 2011, 53 (3), pp.33609-1-5. ⟨10.1051/epjap/2011100065⟩
European Physical Journal: Applied Physics, EDP Sciences, 2011, 53, pp.33609-1-5. ⟨10.1051/epjap/2011100065⟩
European Physical Journal: Applied Physics, EDP Sciences, 2011, 53 (3), ⟨10.1051/epjap/2011100065⟩
International audience; Highly compact dual-mode semiconductor laser sources get more and more attention in different application fields such as radar, security and personal communication systems. When the two generated wavelengths are detected withi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e08ad4b4af57344f64f2b35c7607481
http://hdl.handle.net/20.500.12210/49245
http://hdl.handle.net/20.500.12210/49245
Autor:
B. Fernier, L. Le Gouezigou, A. Guichardon, Dominique Bonnevie, Alain Accard, Francis Poingt, R.J. Simes, Leon Goldstein
Publikováno v:
Journal of Crystal Growth. 127:5-8
Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 μm. The stripe was
Autor:
L. Le Gouezigou, M. Lambert, Francois Brillouet, P. Garabedian, Ph. Pagnod-Rossiaux, Fabienne Gaborit
Publikováno v:
Journal of Crystal Growth. 120:317-322
Fe doped semi-insulating InP layers have been grown by gas source MBE with a solid iron source. Structure as n-i-n, p-i-n and p-n-i-n were characterized by I ( V ) measurements and secondary ion mass spectroscopy profiling (SIMS). As shown by SIMS, u
Autor:
Romain Brenot, Olivier Drisse, Alain Accard, Christophe Kazmierski, Francis Poingt, G-H Duan, L. Le Gouezigou, Francois Lelarge, J.-G. Provost, Estelle Derouin, F. van Dijk, Dalila Make, O. Le Gouezigou, Frederic Pommereau
Publikováno v:
2008 IEEE 21st International Semiconductor Laser Conference.
We study modulation properties of state-of-the-art quantum dot lasers and compare them with state-of-the-art Al-based quantum well lasers. In particular, we demonstrate uncooled transmission over 20 km at 10 Gbit/s, limited by a large adiabatic chirp
Quantitative measurement of low propagation losses at 1.55 mum on planar photonic crystal waveguides
Publikováno v:
Optics letters. 26(16)
The Fabry–Perot resonance technique has been used to determine the propagation losses of planar photonic crystal (PC) waveguides. The structures are patterned into a GaInAsP confining layer on an InP substrate. Losses as low as 11 dB/mm have been m
Autor:
Francis Poingt, Alexandre Shen, B. Rousseau, F. van Dijk, Francois Lelarge, Estelle Derouin, Guang-Hua Duan, Dalila Make, Frederic Pommereau, L. Le Gouezigou, Beatrice Dagens, Alain Accard, J.-G. Provost, Olivier Drisse, Jean Landreau, O. Le Gouezigou, Romain Brenot
Publikováno v:
Optoelectronic Materials and Devices II.
This paper summarizes recent advances on InAs/InP mode-locked quantum dashes (QD) lasers, and their applications for all-optical clock recovery, short pulse generation and millimeter wave generation. We demonstrate that QD FP lasers, owing to the sma
Autor:
F. van-Dijk, O. Le Gouezigou, Alain Accard, Francis Poingt, F. Martin, Frederic Pommereau, B. Rousseau, L. Le Gouezigou, Francois Lelarge
Publikováno v:
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.
We investigate in detail the influence of the tunneling-injection design on the device performances of InAs/InP QDashes-based broad-area lasers. Using optimum design, high-performances single mode buried ridge stripe Fabry-Perrot lasers are reported