Zobrazeno 1 - 10
of 305
pro vyhledávání: '"L. di Cioccio"'
Autor:
P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Nötzel, M. K. Smit
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 3, Pp 299-305 (2010)
We present an InP-based membrane p-i-n photodetector on a silicon-on-insulator sample containing a Si-wiring photonic circuit that is suitable for use in optical interconnections on Si integrated circuits (ICs). The detector mesa footprint is 50 $\mu
Externí odkaz:
https://doaj.org/article/b81d9a6450cb41389cbb9bef34e6a7aa
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd530952af6f51571eaf800186cdcc8
https://doi.org/10.1201/9781003069621-22
https://doi.org/10.1201/9781003069621-22
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
In this, recent results where wafer bonding is a key stage to develop innovative susbtrates for Silicon carbide and Gallium Nitride next generation power devices are presented.
Autor:
V. Balan, Yann Henrion, D. Bouchu, J. Jourdon, Severine Cheramy, Stephane Moreau, L. Di Cioccio, P. Lamontagne, Frank Fournel, Lucile Arnaud, A. Jouve, Sandrine Lhostis
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
The paper reviews the robustness/reliability achievements and include previously published data related to the hybrid bonding module for W2W and D2W bonding techniques.
Akademický článek
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Autor:
Julie Widiez, Jose Carlos Piñero, Daniel Araujo, G. Alba, J. de Vecchy, D. Fernández, L. Di Cioccio, Fernando Lloret, Julien Pernot
Publikováno v:
Applied Surface Science
Applied Surface Science, 2020, 528, pp.146998. ⟨10.1016/j.apsusc.2020.146998⟩
Applied Surface Science, 2020, 528, pp.146998. ⟨10.1016/j.apsusc.2020.146998⟩
An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large
Publikováno v:
3D Integration in VLSI Circuits ISBN: 9781315200699
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7d4216b7a40b90657b172f96168343f
https://doi.org/10.1201/9781315200699-7
https://doi.org/10.1201/9781315200699-7
Autor:
Paul R. Chalker, Ruiyang Yu, Marleen Van Hove, Geoff Haynes, Enrico Zanoni, Jie Hu, Xu Li, Hiroshi Amano, Daniel Piedra, Hiroji Kawai, Min Sun, Martin Kuball, Qingyun Huang, L. Di Cioccio, Carlo De Santi, Rongming Chu, Matthew Charles, Yuhao Zhang, Rekha Reddy, Erwan Morvan, Joseph J. Freedsman, Akira Nakajima, Tomas Palacios, Thomas Heckel, Denis Marcon, Shu Yang, Stephen Oliver, A. Torres, Oliver Häberlen, Stefan Zeltner, Dan Kinzer, Marc Plissonnier, Vineet Unni, Iain G. Thayne, Gaudenzio Meneghesso, Patrick Fay, David J. Wallis, Mengyuan Hua, Chris Youtsey, Shuichi Yagi, Sheng Jiang, Alex Q. Huang, Louis J. Guido, Matteo Meneghini, Ashwani Kumar, Jingshan Wang, Dilini Hemakumara, Nicola Trivellin, Martin Marz, Jinqiao Xie, Nadim Chowdhury, Maria Merlyne De Souza, T Bouchet, Michael J. Uren, Bernd Eckardt, Ekkanath Madathil Sankara Narayanan, Peter A. Houston, K. B. Lee, Matteo Borga, Yannick Baines, Takashi Egawa, Robert McCarthy, Stefaan Decoutere, Kevin J. Chen
Publikováno v:
Journal of Physics D: Applied Physics
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At
Autor:
Perceval Coudrain, Guillaume Parry, Patrick McGarry, L. Di Cioccio, Yann Beilliard, Rafael Estevez
Publikováno v:
International Journal of Solids and Structures
International Journal of Solids and Structures, Elsevier, 2017, 117, pp.208-220. ⟨10.1016/j.ijsolstr.2016.02.041⟩
International Journal of Solids and Structures, 2017, 117, pp.208-220. ⟨10.1016/j.ijsolstr.2016.02.041⟩
International Journal of Solids and Structures, Elsevier, 2017, 117, pp.208-220. ⟨10.1016/j.ijsolstr.2016.02.041⟩
International Journal of Solids and Structures, 2017, 117, pp.208-220. ⟨10.1016/j.ijsolstr.2016.02.041⟩
Copper direct bonding technology is considered to be one of the most promising approaches for matching the miniaturization needs in future tridimensional integrated high performance circuits (3D-IC). However, the bonding mechanism of copper surfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c09bf98a7d68432918ce81757b3aefd9
https://hal.archives-ouvertes.fr/hal-01685170
https://hal.archives-ouvertes.fr/hal-01685170
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
In this paper we present a new approach for building specific packaging that is scalable, versatile and could be potentially cost competitive. Using polymer additive manufacturing, more commonly known as 3D printing, we set out to build customized st