Zobrazeno 1 - 10
of 89
pro vyhledávání: '"L. Zanaveskin"'
Autor:
G. Dmitriev, L. Zanaveskin
Publikováno v:
Chemical Engineering Transactions, Vol 24 (2011)
Abstract preview not available - see full-text PDF article.
Externí odkaz:
https://doaj.org/article/f7f5195a2d734dfd917aee27fa330a38
Autor:
L. L. Lev, I. O. Maiboroda, E. S. Grichuk, N. K. Chumakov, N. B. M. Schröter, M.-A. Husanu, T. Schmitt, G. Aeppli, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov
Publikováno v:
Physical Review Research, Vol 4, Iss 1, p 013183 (2022)
Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A semiconductor particularly important for optical as well as microwave devices is GaN. What makes t
Externí odkaz:
https://doaj.org/article/4e91a7d66a564861aae5c4caa751f3cf
Autor:
K. L. Zanaveskin
Publikováno v:
Tsvetnye Metally. :41-49
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86276f66e980f74a0963b3d32b9592d8
https://doi.org/10.17580/tsm.2022.11.04
https://doi.org/10.17580/tsm.2022.11.04
Publikováno v:
Crystallography Reports. 67:712-716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1b945e043368a9d59d7da12c3cd960c
https://doi.org/10.1134/s1063774522050145
https://doi.org/10.1134/s1063774522050145
Autor:
K. L. Zanaveskin
Publikováno v:
Tsvetnye Metally. :45-55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfee5c21516ba80cb0cfec8b8284fbe7
https://doi.org/10.17580/tsm.2022.08.06
https://doi.org/10.17580/tsm.2022.08.06
Publikováno v:
Kinetics and Catalysis. 62:798-811
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566ffc76e69f2436cba695b0246a0aa4
https://doi.org/10.1134/s0023158421060082
https://doi.org/10.1134/s0023158421060082
Autor:
I. S. Ezubchenko, M. Ya. Chernykh, P. A. Perminov, J. V. Grishchenko, I. N. Trun’kin, I. A. Chernykh, M. L. Zanaveskin
Publikováno v:
Technical Physics Letters. 47:705-708
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2748726a8ca5e76fde607c7bb2015f2
https://doi.org/10.1134/s1063785021070208
https://doi.org/10.1134/s1063785021070208
Autor:
Anna N, Matsukatova, Aleksandr I, Iliasov, Kristina E, Nikiruy, Elena V, Kukueva, Aleksandr L, Vasiliev, Boris V, Goncharov, Aleksandr V, Sitnikov, Maxim L, Zanaveskin, Aleksandr S, Bugaev, Vyacheslav A, Demin, Vladimir V, Rylkov, Andrey V, Emelyanov
Publikováno v:
Nanomaterials (Basel, Switzerland). 12(19)
Convolutional neural networks (CNNs) have been widely used in image recognition and processing tasks. Memristor-based CNNs accumulate the advantages of emerging memristive devices, such as nanometer critical dimensions, low power consumption, and fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6043cf201e8c1c3fa26ce59eddc33145
https://pubmed.ncbi.nlm.nih.gov/36234583
https://pubmed.ncbi.nlm.nih.gov/36234583
Autor:
I. O. Mayboroda, Yu. V. Grishchenko, N. K. Chumakov, M. L. Zanaveskin, E. M. Kolobkova, I. A. Chernykh
Publikováno v:
Crystallography Reports. 66:520-524
The formation of β-Si3N4 for subsequent growth of AlGaN and GaN heterostructures of silicon wafers has been studied. It is established that the native oxide layer protects the silicon surface from the formation of amorphous silicon nitride when heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6029b5c961236c9285a5974b4a3668a1
https://doi.org/10.1134/s1063774521030172
https://doi.org/10.1134/s1063774521030172
Autor:
I. O. Maiboroda, I. A. Chernykh, V. S. Sedov, A. S. Altakhov, A. A. Andreev, Yu. V. Grishchenko, E. M. Kolobkova, A. K. Mart’yanov, V. I. Konov, M. L. Zanaveskin
Publikováno v:
Technical Physics Letters. 47:353-356
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5365831d67a78b542b95873d943f037
https://doi.org/10.1134/s1063785021040118
https://doi.org/10.1134/s1063785021040118