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pro vyhledávání: '"L. Yu. Potakhova"'
Autor:
I. D. Romanova, M. P. Yakubenya, V. S. Morozov, L. Yu. Potakhova, N. K. Maksimova, A. M. Misik, O. M. Ivleva, V. P. Yanovskii
Publikováno v:
Soviet Physics Journal. 30:131-136
Studies were made of heat-treated Ni-GaAs contacts, at which, prior to the electrochemical deposition of nickel, thin layers of gallium or arsenic were deposited. The physicochemical reactions at the interfaces were investigated, as well as the elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a68464bf9cfd3a2e5916b9683b54a9c
https://doi.org/10.1007/bf00898151
https://doi.org/10.1007/bf00898151
