Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. Y. Hau"'
Autor:
H. Yoon, Vinayak Bharat Naik, J. Kwon, K. Yamane, L. Pu, J. H. Lim, S. T. Woo, O. Kallensee, J. Hwang, Y. S. You, S. Ong, Jeff J. Xu, L. Zhang, Tae Young Lee, S. H. Jang, S. K L. C. Goh, F. Tan, Eng Huat Toh, D. Zeng, N. Balasankaran, Soh Yun Siah, Hemant Dixit, T. H. Chan, N. L. Chung, R. Low, G. Congedo, R. Chao, Y. Otani, Johannes Mueller, C.G. Lee, T. Merbeth, J. W. Ting, L. Y. Hau, K. W. Gan, Y. Huang, A. Vogel, E. Quek, C. Chiang, Behtash Behin-Aein, W. P. Neo, T. Ling, V. Kriegerstein, Chim Seng Seet, Jen Shuang Wong, B. Pfefferling
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having 5x solder reflows compatibility stack has passed JEDEC standard qualification (ECC-OFF) wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2297be3b6e345d353ce3138acd58f0cd
https://doi.org/10.1109/iedm13553.2020.9371935
https://doi.org/10.1109/iedm13553.2020.9371935
Autor:
S. T. Woo, Y. Otani, S. Ong, N. L. Chung, R. Low, D. Zeng, L. Y. Hau, S. Y. Siah, J. H. Lim, J. Hwang, L. Zhang, J. Chang, S. H. Jang, Y. S. You, F. Tan, L. C. Goh, T. Ling, Chim Seng Seet, J. Kwon, K. Yamane, Vinayak Bharat Naik, R. Chao, N. Balasankaran, T. H. Chan, J. W. Ting, Tae Young Lee
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate superior data retention of 1 month at 125°C with improved switching efficiency at 10 ns write time without back-hopping failure. The 40Mb macro having the advanced MTJ stacks show wide operating temperature range from -40 to 125°C wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bead89c44fb678ee1674ac0f0d28e99
https://doi.org/10.1109/iedm13553.2020.9372015
https://doi.org/10.1109/iedm13553.2020.9372015
Autor:
V. B. Naik, K. Yamane, J. H. Lim, T. Y. Lee, J. Kwon, Behin Aein, N. L. Chung, L. Y. Hau, R. Chao, D. Zeng, Y. Otani, C Chiang, Y. Huang, L. Pu, N. Thiyagarajah, S. H. Jang, W. P. Neo, H. Dixit, S.K Aris, L. C. Goh, T. Ling, J. Hwang, J. W. Ting, L. Zhang, R. Low, N. Balasankaran, C. S. Seet, S. Ong, J. Wong, Y. S. You, S. T. Woo, S. Y. Siah
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We report a reliable TDDB lifetime projection model using power law verified from 40Mb STT-MRAM macro at sub-ppm failure rate to realize nearly unlimited endurance for cache applications. A specially designed macro, having internal temperature contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b950a86848127f4ffc230063ff57e42d
https://doi.org/10.1109/vlsitechnology18217.2020.9265086
https://doi.org/10.1109/vlsitechnology18217.2020.9265086
Autor:
R. Chao, C. Chiang, R. Low, S. T. Woo, S. H. Jang, N. Balasankaran, F. Tan, J.H. Lim, L. Y. Hau, J. Kwon, Vinayak Bharat Naik, K. Yamane, L. C. Goh, Y. S. You, W. P. Neo, Naganivetha Thiyagarajah, Kevin Khua, Y. Huang, J. W. Ting, K. Sivabalan, Tae Young Lee, T. Ling, L. Zhang, Chim Seng Seet, Jen Shuang Wong, Y. Otani, J. Hwang, D. Zeng, S. Ong, Soh Yun Siah, N. L. Chung
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We demonstrate less than 10 ns write speed and read access for 40Mb embedded MRAM (eMRAM) macro covering high temperature up to 125°C. The macro shows un-powered data retention of 10 second at 125°C and the capability of achieving 1012 cycles endur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1665aecda9e6972943c9f7a79be5742c
https://doi.org/10.1109/vlsitechnology18217.2020.9265027
https://doi.org/10.1109/vlsitechnology18217.2020.9265027
Autor:
Vinayak Bharat Naik, S. L Tan, W. P. Neo, J. H. Lim, Kevin Khua, T. Ling, J. Hwang, Y. S. You, R. Chao, Chim Seng Seet, L. C. Goh, S. T. Woo, K. Yamane, D. Zeng, R. Low, Naganivetha Thiyagarajah, Behtash Behin-Aein, N. Balasankaran, S. H. Jang, Eng Huat Toh, J. W. Ting, Tae Young Lee, E. Quek, L. Zhang, K. Sivabalan, L. Y. Hau, Y. Otani, S. Ong, Soh Yun Siah, N. L. Chung, J. Kwon
Publikováno v:
IRPS
In the era of embedded MRAM (eMRAM) technology evolution for the replacement of eFlash and SRAM, the correlation between magnetic immunity (MI) and eMRAM reliability must be well understood to realize the mass production. In this paper, we have class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baaf7f37e50fcc0edf972ac185f34e58
https://doi.org/10.1109/irps45951.2020.9128317
https://doi.org/10.1109/irps45951.2020.9128317
Autor:
V. B. Naik, J. H. Lim, T. Y. Lee, W. P. Neo, H. Dixit, S. K, L. C. Goh, T. Ling, J. Hwang, D. Zeng, J. W. Ting, K. Lee, E. H. Toh, L. Zhang, R. Low, N. Balasankaran, L. Y. Zhang, K. W. Gan, L. Y. Hau, J. Mueller, B. Pfefferling, O. Kallensee, K. Yamane, S. L. Tan, C. S. Seet, Y. S. You, S. T. Woo, E. Quek, S. Y. Siah, J. Pellerin, R. Chao, J. Kwon, N. Thiyagarajah, N. L. Chung, S. H. Jang, B. Behin-Aein
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We demonstrate the manufacturable 22nm FD-SOI 40Mb embedded MRAM (eMRAM), by achieving product functionality and reliability at package level across industrial-grade operating temperature range (−40 to 125 °C) with ECC-off mode. The magnetic tunne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97756aa1076d3633495ae47aedb97a18
https://doi.org/10.1109/iedm19573.2019.8993454
https://doi.org/10.1109/iedm19573.2019.8993454