Zobrazeno 1 - 10
of 457
pro vyhledávání: '"L. Worschech"'
Autor:
Andreas Pfenning, Grzegorz Sęk, L. Worschech, M. Dyksik, Robert Weih, Fabian Hartmann, M. Rygała, Marcin Motyka, Sven Höfling
Publikováno v:
Optica Applicata. 51
We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical
Autor:
A. Naranjo, L. Worschech, Marcio D. Teodoro, G. E. Marques, E. R. Cardozo de Oliveira, Sven Höfling, Fabian Hartmann, Victor Lopez-Richard, Andreas Pfenning
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::733449da64201ad25f406dfc2819d173
http://arxiv.org/abs/2007.11736
http://arxiv.org/abs/2007.11736
Autor:
Jan Misiewicz, M. Kurka, Sven Höfling, Robert Weih, Marcin Motyka, Grzegorz Sęk, Andreas Pfenning, M. Dyksik, L. Worschech, Fabian Hartmann
Publikováno v:
Acta Physica Polonica A. 134:962-965
Autor:
G. E. Marques, E. C. dos Santos, L. Worschech, E. D. Guarin Castro, Victor Lopez-Richard, Fabian Hartmann, E. R. Cardozo de Oliveira, Marcio D. Teodoro, Sven Höfling, Andreas Pfenning
Publikováno v:
Physical Review B. 98
We explore the nature of the electroluminescence (EL) emission of purely $n$-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current chan
Autor:
L. Worschech, S. Schmid, Fabian Hartmann, Martin Kamp, Sven Höfling, P. Pfeffer, Gérald Bastard, E. Batke, Georg Knebl
The work was supported by the DFG (project Ka2318/5-1) and the Elite Network of Bavaria within the graduate program “Topological Insulators”. We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::662953d2bb655a9437c6cf66d111bf21
https://hdl.handle.net/10023/15511
https://hdl.handle.net/10023/15511
Autor:
L. Worschech, Florian Rothmayr, Georg Knebl, S. Krueger, Andreas Pfenning, Anne Schade, C. Kistner, J. Koeth, Sven Höfling, Fabian Hartmann
The authors are grateful for financial support by the BMBF via the national project HIRT (FKZ:13XP5003A). We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e374dc6f13220e2985ba4fc1a6515ad9
https://hdl.handle.net/10023/13279
https://hdl.handle.net/10023/13279
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b81de978132c74ff6c1c653dd9e124bf
https://doi.org/10.1201/9781351074629-121
https://doi.org/10.1201/9781351074629-121
Autor:
Andreas Pfenning, L. Worschech, Anne Schade, J. Koeth, S. Krueger, Georg Knebl, C. Kistner, Florian Rothmayr, Fabian Hartmann, Sven Höfling
Publikováno v:
CLEO Pacific Rim Conference.
We fabricated resonant tunneling diode photodetectors with a GaInAsSb absorption layer and a GaAsSb/AlAsSb double barrier. The detector cut-off wavelength is $3.5\ {\mu \text{m}}$ and reaches a peak sensitivity of 0.85 A/W at 2004 nm.
Autor:
Sven Höfling, L. Worschech, Monika Emmerling, Martin Kamp, S. Göpfert, Leonardo K. Castelano, Victor Lopez-Richard, M. Rebello Sousa Dias, Yuriy V. Pershin, P. Maier, Fabian Hartmann, Gilmar E. Marques, Christian Schneider
The authors are grateful for financial support by the European Union (FPVII (2007-2013) under grant agreement no. 318287 LANDAUER), and the Brazilian Agencies FAPESP (grants 2012/13052 - 6, and 2012/51415 - 3), CNPq and CAPES. V. L.-R. acknowledges t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93558c870ab9c4c9a2b802017e3adbcc
https://hdl.handle.net/10023/12956
https://hdl.handle.net/10023/12956
Autor:
Christian Schneider, M. Amthor, L. Worschech, Helgi Sigurdsson, Timothy Chi Hin Liew, Sven Höfling, Fabian Hartmann, Sebastian Klembt, Martin Klaas
The authors would like to thank the State of Bavaria for financial support. HS acknowledges support from the The Icelandic Research Fund, grant No. 163082-051. TL thanks the MOE Academic Research Fund for support. We report on electrically and nonres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f835601a78e155fa591eb7ba50bf4554
https://hdl.handle.net/10356/85841
https://hdl.handle.net/10356/85841