Zobrazeno 1 - 10
of 29
pro vyhledávání: '"L. Winking"'
Autor:
E. Zubkov, L. Winking, R. G. Ulbrich, J. Homoth, T. Druga, Rolf Möller, M. R. Kaspers, Martin Wenderoth, A. Bernhart, B. Weyers, C. A. Bobisch, A Bannani
Publikováno v:
Nano Letters. 9:1588-1592
If a current of electrons flows through a normal conductor (in contrast to a superconductor), it is impeded by local scattering at defects as well as phonon scattering. Both effects contribute to the voltage drop observed for a macroscopic complex sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02f6d3250b86db7bf627d7babea337f3
https://doi.org/10.1021/nl803783g
https://doi.org/10.1021/nl803783g
Autor:
Stefan Malzer, Rainer G. Ulbrich, Sebastian Loth, Gottfried H. Döhler, Martin Wenderoth, L. Winking
Publikováno v:
Japanese Journal of Applied Physics. 45:2193-2196
Scanning tunneling spectroscopy (STS) at 8 K is used to study single shallow acceptors embedded near {110}-surfaces in gallium arsenide (GaAs). At appropriate bias voltages the circularly symmetric contrast normally observed for charged defects evolv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1f4490a420afab4191e3b6a65a776f
https://doi.org/10.1143/jjap.45.2193
https://doi.org/10.1143/jjap.45.2193
Autor:
Martin Wenderoth, Stefan Blügel, Rainer G. Ulbrich, S. Rolf-Pissarczyk, T. Iffländer, L. Winking, A. Al-Zubi
Publikováno v:
Physical review letters 114(14), 146804 (2015). doi:10.1103/PhysRevLett.114.146804
We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36fdd35b73a557b5909fa6a9ba51365f
https://pubmed.ncbi.nlm.nih.gov/25910150
https://pubmed.ncbi.nlm.nih.gov/25910150
Publikováno v:
Journal of Vocational Rehabilitation. 3:27-42
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43232f60624817689618595550ce0d86
https://doi.org/10.3233/jvr-1993-3305
https://doi.org/10.3233/jvr-1993-3305
Autor:
T. C. G. Reusch, L. Winking, Claus Ropers, F. Grosse, M. Grochol, M. Erdmann, Martin Wenderoth, Stefan Malzer, Gottfried H. Döhler, R. Zimmermann, Rainer G. Ulbrich
Publikováno v:
Physical Review B. 75
A combined study of the optical and structural properties of $\mathrm{Al}\mathrm{Ga}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ quantum wells is presented. Microphotoluminescence experiments, magnetomicrophotoluminescence, and atomically resolved cross-sec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18010ed460be8d51fef9ca5c311d21e
https://doi.org/10.1103/physrevb.75.115317
https://doi.org/10.1103/physrevb.75.115317
Autor:
Rainer G. Ulbrich, Stefan Malzer, L. Winking, Martin Wenderoth, Sebastian Loth, Gottfried H. Döhler
Publikováno v:
Physical Review Letters. 96
Tunneling transport through the depletion layer under a GaAs ${110}$ surface is studied with a low temperature scanning tunneling microscope (STM). The observed negative differential conductivity is due to a resonant enhancement of the tunneling prob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13432389a9bd1210a304faca3d24c4e0
https://doi.org/10.1103/physrevlett.96.066403
https://doi.org/10.1103/physrevlett.96.066403
Autor:
Reiner Kirchheim, Stefan Malzer, Martin Wenderoth, L. Winking, Gottfried H. Döhler, T. C. G. Reusch, P.-J. Wilbrandt, Rainer G. Ulbrich
Publikováno v:
AIP Conference Proceedings.
We present a cross‐sectional STM study of delta‐doped GaAs on the nanoscale. GaAs (001) layers grown by MBE with a series of embedded carbon delta‐layers having nominal sheet densities in the range 3×1011/cm2 to 1×1014/cm2 were investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a58b878a68afe42519179b529599cb1
https://doi.org/10.1063/1.1994038
https://doi.org/10.1063/1.1994038
Publikováno v:
Physical Review Letters. 93
Gold contacts on $n$-type $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}(110)$ have been investigated using scanning tunneling microscopy and spectroscopy in cross-sectional configuration. In spatially resolved current voltage spectroscopy the Schottky ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57c844dc87bff71cffb482edd025b23
https://doi.org/10.1103/physrevlett.93.206801
https://doi.org/10.1103/physrevlett.93.206801
Publikováno v:
Physical review letters. 93(20)
Gold contacts on n-type GaAs(110) have been investigated using scanning tunneling microscopy and spectroscopy in cross-sectional configuration. In spatially resolved current voltage spectroscopy the Schottky barrier potential is visible. We find sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d78cced8577d702a527d309a4232743b
https://pubmed.ncbi.nlm.nih.gov/15600951
https://pubmed.ncbi.nlm.nih.gov/15600951
Publikováno v:
Applied Physics Letters. 92:193102
Fe films of up to 10 ML thickness were grown on cleaved GaAs(110) in a two-step process that associates low-temperature deposition at 130K with a subsequent annealing to room temperature. Low-energy electron diffraction, scanning tunneling microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77204e5c8a87fe15c039623ee3bff3c0
https://doi.org/10.1063/1.2920826
https://doi.org/10.1063/1.2920826