Zobrazeno 1 - 4
of 4
pro vyhledávání: '"L. W. Rosenberger"'
Publikováno v:
Surface and Interface Analysis. 40:1254-1261
Ten samples of crystalline aluminum nitride (AlN) film were deposited on sapphire and silicon substrates by a plasma source molecular beam method. The samples were analyzed using X-ray photoelectron spectroscopy (XPS) depth profiling and high-resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84de4306101071423a04607f1a725ddd
https://doi.org/10.1002/sia.2874
https://doi.org/10.1002/sia.2874
Autor:
Golam Newaz, Gina S. Shreve, R.J. Baird, Greg Auner, L. W. Rosenberger, Y.V. Danylyuk, Daniel G. Georgiev
Publikováno v:
Applied Surface Science. 249:45-53
The potential of excimer laser micro-processing for surface modification of aluminum nitride (AlN) thin films was studied. Thin films of AlN were deposited by plasma-source molecular beam epitaxy (PSMBE) on silicon and sapphire substrates. These film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9a492de0ea149a98bcacd32410b239
https://doi.org/10.1016/j.apsusc.2004.11.027
https://doi.org/10.1016/j.apsusc.2004.11.027
Autor:
Ronald F. Gibson, Soma S. Perooly, M.H. Rahman, Varun Garg, Greg Auner, Gina S. Shreve, L. W. Rosenberger
Publikováno v:
MRS Proceedings. 888
Aluminum Nitride (AlN) is a technologically important wide band gap semiconductor and a potential piezo-electric material for Biosensor application [1]. It is a clear candidate for the integration of surface acoustic wave (SAW) devices on chips with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c81643baedb2fa155fb83df7b92e747
https://doi.org/10.1557/proc-0888-v03-12
https://doi.org/10.1557/proc-0888-v03-12
Publikováno v:
Journal of Applied Physics. 103:063504
We investigated the behavior of Raman modes for AlN thin films fabricated with plasma source molecular beam epitaxy method having high levels of oxygen contamination. Oxygen atoms occupy different lattice sites depending on their at. % value and, thu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07664a776327934b6134cad7112cdd34
https://doi.org/10.1063/1.2894588
https://doi.org/10.1063/1.2894588