Zobrazeno 1 - 10 of 50 pro vyhledávání: '"L. Vandroux"'
1
Innovative scheme for selective carbon nanotubes integration in via structures
Autor: Hanako Okuno, T. Billon, J. F. Lugand, K. Yckache, S. Huet, L. Vandroux, Denis Mariolle, M. Fayolle, A. Fournier, J. Pontcharra, Viviane Muffato, P. Gautier, Jean Dijon, Etienne Quesnel, C. Jayet, H. Grampeix
Publikováno v: Microelectronic Engineering. 88:833-836
Thanks to their outstanding electrical properties [1,2], carbon nanotubes (CNTs) are promising candidate to replace Cu in advanced interconnects [3-8]. In damascene based CNT via integration scheme, CNTs growth occurs on the whole surface of the wafe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e757d72c82472b9226ca3b338c86f767
https://doi.org/10.1016/j.mee.2010.07.038
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2
In-depth investigation of the mechanisms impacting C-V/G-V characteristics of Ge/GeON/HfO2/TiN stacks by electrical modeling
Autor: Laurent Clavelier, X. Garros, C. Le Royer, Fabien Boulanger, Pascal Besson, L. Vandroux, Simon Deleonibus, J.M. Hartmann, Virginie Loup, Perrine Batude
Publikováno v: Microelectronic Engineering. 84:2320-2323
Using C-V and G-V electrical modeling, we give insights on the atypical behavior of C-V characteristics with Ge substrates i.e. the low frequency behavior in strong inversion and the large bumps in the weak inversion region. The modeling of the stron
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::382746ce9d72c25bdc85a0cd9258e26c
https://doi.org/10.1016/j.mee.2007.04.066
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3
Film-thickness-dependent conduction in ordered Si quantum dot arrays
Autor: B. Doisneau, Mathieu Baudrit, Kavita Surana, Daniel Bellet, G. Le Carval, Jean-Marie Lebrun, Philippe Thony, Pierre Mur, L Vandroux, H. Lepage
Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2012, 23 (10), pp.105401-105407. ⟨10.1088/0957-4484/23/10/105401⟩
Nanotechnology, 2012, 23 (10), pp.105401-105407. ⟨10.1088/0957-4484/23/10/105401⟩
International audience; In recent years, silicon nanostructures have been investigated extensively for their potential use in photonic and photovoltaic applications. So far, for silicon quantum dots embedded in SiO2, control over inter-dot distance a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3433ca08598abec4468f98d45a0dd9d4
https://hal.archives-ouvertes.fr/hal-01067739
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4
Investigation of charge-trap memories with AlN based band engineered storage layers
Autor: P. Brianceau, L. Vandroux, Marc Gely, J. P. Colonna, D. Belhachemi, A.M. Papon, Gerard Ghibaudo, Eugénie Martinez, R. Kies, G. Molas, V. Vidal, Christophe Licitra, Marc Bocquet, B. De Salvo
Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2011, 58 (1), pp.68-74. ⟨10.1016/j.sse.2010.11.030⟩
Solid-State Electronics, 2011, 58 (1), pp.68-74. ⟨10.1016/j.sse.2010.11.030⟩
This paper presents the investigation of the electrical properties of charge-trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fb7292b1adeaac6d373a3115ffdc51d
https://hal.archives-ouvertes.fr/hal-01804675
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5
Investigation of charge-trap memories with AlN based band engineered storage layers
Autor: Marc Gely, G. Molas, R. Kies, D. Belhachemi, P. Brianceau, L. Vandroux, J. P. Colonna, Marc Bocquet, B. De Salvo, Gerard Ghibaudo, V. Vidal
Publikováno v: 2010 IEEE International Memory Workshop.
This paper presents an in-depth investigation of the electrical properties of charge trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using sta
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8d9e71e8f8a5c8d7d063638545bd211
https://doi.org/10.1109/imw.2010.5488309
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6
Low-resistance a-SiGe-based microbolometer pixel for future smart IR FPA
Autor: C. Vialle, L. Vandroux, Jean-Jacques Yon, Agnès Arnaud, Pierre Imperinetti, V. Goudon, J. P. Nieto, E. Rolland
Publikováno v: SPIE Proceedings.
In the outlook of the next 12μm pixel node uncooled IR FPA, the Laboratoire InfraRouge (LIR) of the Electronics and Information Technology Laboratory (LETI) is still pushing forward the amorphous silicon (a-Si) based microbolometer technology. A pro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14f81640b6a80b851f7c628516fceb1c
https://doi.org/10.1117/12.850862
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7
High density platinum nanocrystals for non-volatile memory applications
Autor: J. Dufourcq, S. Bodnar, G. Gay, D. Lafond, P. Mur, G. Molas, J. P. Nieto, L. Vandroux, L. Jodin, F. Gustavo, Th. Baron
Publikováno v: Applied Physics Letters
Applied Physics Letters, 2008, pp.92, 073102
Applied Physics Letters, American Institute of Physics, 2008, pp.92, 073102
High density self-assembled platinum nanodots are elaborated using a radio frequence sputtering technique and embedded in memory structures. Electronic microscopy methods are used to characterize the morphology. Scanning electron microscopy and scann
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe33e76a9ba89ce37e82ae8b4046cf83
https://hal.science/hal-00394784
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8
Localized SOI technology: an innovative Low Cost self-aligned process for Ultra Thin Si-film on thin BOX integration for Low Power applications
Autor: Thomas Ernst, L. Clement, Simon Deleonibus, J.M. Hartmann, F. Allain, A. Quiroga, E. Rouchouze, M.-P. Samson, L. Vandroux, D. Bensahel, Stephane Monfray, D. Chanemougame, J. P. Colonna, Nicolas Loubet, S. Borel, Bernard Guillaumot, Yves Campidelli, A. Margin, Didier Dutartre, Alain Toffoli, D. Renaud, Christian Arvet, Thomas Skotnicki, G. Rabille
Publikováno v: 2007 IEEE International Electron Devices Meeting.
In this paper, we demonstrate the first successful integration of "localized SOI" devices integrated with HfO2/TiN gate stack on dedicated areas of bulk CMOS substrates. We propose a low cost innovative approach based on the SON technology, where the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc4651c573e1f3b9e09148e6b69e72dd
https://doi.org/10.1109/iedm.2007.4419040
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9
Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 'high k' and 2 metal deposition techniques
Autor: Virginie Loup, Claudia Wiemer, Mikael Casse, Christine Morin, S. Minoret, Xavier Garros, Sandrine Lhostis, K. Dabertrand, Michele Perego, Vincent Cosnier, Pascal Besson, L. Vandroux, J-M. Pedini, Marco Fanciulli
Publikováno v: Microelectronic engineering 84 (2007): 1886–1889.
info:cnr-pdr/source/autori:Cosnier, V; Besson, P; Loup, V; Vandroux, L; Minoret, S; Casse, M; Garros, X; Pedini, JM; Lhostis, S; Dabertrand, K; Morin, C; Wiemer, C; Perego, M; Fanciulli, M/titolo:Understanding of the thermal stability of the hafnium oxide%2FTiN stack via 2 'high k' and 2 metal deposition techniques/doi:/rivista:Microelectronic engineering/anno:2007/pagina_da:1886/pagina_a:1889/intervallo_pagine:1886–1889/volume:84
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, pp.Issue: 9-10, (2007) 1886-1889
Microelectronic Engineering, 2007, pp.Issue: 9-10, (2007) 1886-1889
In this work we evaluate the impact of the gate stack layers deposition technologies and their combination on the thermal stability of the stack with respect to EOT vs leakage figure of merit. Two HfO2 deposition technologies have been used: ALCVD an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f44cac09eaa12fc24fd69a1d8ecc4fc4
http://www.cnr.it/prodotto/i/1943
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