Zobrazeno 1 - 10
of 145
pro vyhledávání: '"L. Van den hove"'
Autor:
Adam R. Smith, Rebecca G. Smith, Ehsan Pishva, Eilis Hannon, Janou A. Y. Roubroeks, Joe Burrage, Claire Troakes, Safa Al-Sarraj, Carolyn Sloan, Jonathan Mill, Daniel L. van den Hove, Katie Lunnon
Publikováno v:
Clinical Epigenetics, Vol 11, Iss 1, Pp 1-13 (2019)
Abstract Background Alzheimer’s disease is a progressive neurodegenerative disorder that is hypothesized to involve epigenetic dysfunction. Previous studies of DNA modifications in Alzheimer’s disease have been unable to distinguish between DNA m
Externí odkaz:
https://doaj.org/article/a2d864d64def4e4f9da5378cdfdff5c4
Publikováno v:
PLoS ONE, Vol 6, Iss 9, p e24003 (2011)
Depression during pregnancy and the postpartum period is a growing health problem, which affects up to 20% of women. Currently, selective serotonin reuptake inhibitor (SSRIs) medications are commonly used for treatment of maternal depression. Unfortu
Externí odkaz:
https://doaj.org/article/5606f613f7a1426a816b03675b75a2b3
Autor:
N K, Leibold, M T, Weidner, C, Ziegler, G, Ortega, K, Domschke, K P, Lesch, D L, Van den Hove, K R, Schruers
Publikováno v:
European neuropsychopharmacology : the journal of the European College of Neuropsychopharmacology. 36
A polymorphism in the gene encoding the serotonin (5-HT) transporter (5-HTT) has been shown to moderate the response to CO
Publikováno v:
Progress in molecular biology and translational science. 158
Neurodegenerative diseases are complex, progressive disorders and affect millions of people worldwide, contributing significantly to the global burden of disease. In recent years, research has begun to investigate epigenetic mechanisms for a potentia
Resist surface investigations for reduction of Line-Edge-Roughness in Top Surface Imaging technology
Publikováno v:
Microelectronic Engineering. 46:339-343
The Line-Edge-Roughness (LER) of resist pattern on fine feature has been characterised by means of top/down line width measurements by SEM in Top Surface Imaging (TSI) technology. The resist surface investigation using AFM has provided a correlation
Publikováno v:
Scopus-Elsevier
Three-color flow cytometry immunophenotyping revealed significant increases of CD57+ and CD28- cells among both circulating CD4+ and CD8+ T lymphocytes of untreated hemato-oncological patients (n = 54) as compared to healthy donors (n = 55), with CD5
Publikováno v:
Microelectronic Engineering. :111-115
Excellent resolution and latitudes can be obtained with the commercially available advanced i-line resists. However, printing close to the resolution limit results in severe optical proximity effects (OPE). These effects limit the intra-die CD contro
Autor:
Daniel L. Van den Hove
Publikováno v:
Neurobiology of aging.
Publikováno v:
Microelectronic Engineering. 30:115-118
The requirements imposed by optical proximity correction (OPC) on mask making, i.e. pattern generation, are addressed. Dry etching of MoSi is proposed to deal with the need for improved resolution. E-beam proximity correction (EPC) is used for more a
Autor:
O. Otto, Kurt G. Ronse, Patrick Jaenen, P. Tzviatkov, Casper A. H. Juffermans, Rik Jonckheere, L. Van den hove, Anthony Yen, J. Garofalo, A. Wong
Publikováno v:
Microelectronic Engineering. 30:141-144
In printing random logic circuits down to 0.3 μm using i-line lithography, optical proximity correction is required to maintain across-the-chip linewidth uniformity. Using a rule-based approach with parametric anchoring, process characterization tim