Zobrazeno 1 - 4
of 4
pro vyhledávání: '"L. V. Zolkina"'
Publikováno v:
Crystallography Reports. 53:1236-1240
The growth striation of impurity segregation and electrical properties of Ga0.03In0.97Sb single crystals grown by the Czochralski method in an ultrasonic field have been investigated. It is established that ultrasonic irradiation of the melt during g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbc39360652551756f127b1c9b4af98
https://doi.org/10.1134/s1063774508070249
https://doi.org/10.1134/s1063774508070249
Publikováno v:
Crystal Growth & Design. 6:2412-2416
The influence of 3 MHz ultrasound on the growth of GaAs layers by liquid-phase epitaxy was investigated. Ultrasound caused morphological changes in the solid−liquid interface. Distilled water and g...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e736601e47547dcb41bf58ae16c183ed
https://doi.org/10.1021/cg0499313
https://doi.org/10.1021/cg0499313
Publikováno v:
Solid-State Electronics. 51:820-822
Effect of ultrasonic waves on growth striations and electrophysical properties of Ga x In 1− x Sb single crystals with x up to 0.03 have been investigated. A decrease in the ultrasound field of growth striations in Ga x In 1− x Sb single crystals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439795d4ba6c9c38faeb1424b489b404
https://doi.org/10.1016/j.sse.2007.05.002
https://doi.org/10.1016/j.sse.2007.05.002
Publikováno v:
Crystal Growth & Design; Oct2006, Vol. 6 Issue 10, p2412-2416, 5p