Zobrazeno 1 - 10
of 15
pro vyhledávání: '"L. V. Velikov"'
Publikováno v:
Vacuum. 42:133-137
Experimental results on a stencil mask picture (size 0.1 ωm) are presented which transfer by electron beam into a positive resistance layer (thickness 0.3–1.5 μm). The dependence of pattern profile vs electron energy and radiation dose is investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7774cc67381ddf48de34c9ee9e1d5b29
https://doi.org/10.1016/0042-207x(91)90095-z
https://doi.org/10.1016/0042-207x(91)90095-z
Autor:
V E Matyushkov, G S Volkov, T. M. Makhviladze, D. Yu. Zaroslov, A A Shalapenok, K. A. Valiev, L. V. Velikov, D R Il'kaev
Publikováno v:
Soviet Journal of Quantum Electronics. 20:446-450
Experimental and mathematical modeling methods were used in an investigation of the influence of the degree of coherence at the entry to an optical projection system on the quality of the resultant images. It is shown that laser projection lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436236039b870118e7a13b91ca9143e0
https://doi.org/10.1070/qe1990v020n04abeh005953
https://doi.org/10.1070/qe1990v020n04abeh005953
Publikováno v:
Microelectronic Engineering. 11:173-181
The coherence properties of light sources used in the projection lithographic systems strongly affect the photomask image quality reproduced on semiconductor wafer, because they determine the minimum resolvable feature size and the level of speckle i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::317d3b6aec31aabe945a4606c0c3a84f
https://doi.org/10.1016/0167-9317(90)90094-a
https://doi.org/10.1016/0167-9317(90)90094-a
Publikováno v:
Microelectronic Engineering. 11:389-395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526e5ecf9192cc8343c269c04a567cfc
https://doi.org/10.1016/0167-9317(90)90137-i
https://doi.org/10.1016/0167-9317(90)90137-i
Publikováno v:
Soviet Journal of Quantum Electronics. 20:33-36
An investigation was made of the spatial coherence of excimer lasers in different resonator geometries. Lasing with a spectral width of 5 nm was obtained in a scheme using a grating in the autocollimation regime and a four-prism telescope. A discussi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db88632c6a394c96b3bd341762d59b69
https://doi.org/10.1070/qe1990v020n01abeh004786
https://doi.org/10.1070/qe1990v020n01abeh004786
Publikováno v:
SPIE Proceedings.
In present time six types of siliconorganic materials are commonly used in microelectronic, technology: polysiloxanes, polysilozanes, polysilmethylenes, polysilphenylenes, organic polymers with silicon getheroathorns and polysilanes [1].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99f0c94d7cd31bc5533944fdc726a3b
https://doi.org/10.1117/12.130374
https://doi.org/10.1117/12.130374
Autor:
L. V. Velikov, V. E. Tukish, Andrey B. Poljakov, D. Y. Zaroslov, V. A. Nikitaev, Alexei L. Bogdanov, K. A. Valiev
Publikováno v:
SPIE Proceedings.
A new resist composition based on PMMA-MAA copolymer with antracene additive was exposed by a single pulse of KrFexcimer laser (X =248 nm). Its contrast was found to exceed significantly the limitdetermined by light absorbtion. Studies of the develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a096ba7ebd798d821f0ce346aa0c59b
https://doi.org/10.1117/12.20138
https://doi.org/10.1117/12.20138
Autor:
V. T. Dolgich, R. M. Imamov, V. A. Kalnov, A. A. Lomov, L. V. Velikov, K. A. Valiev, O. I. Lebedev, V. V. Protopopov
Publikováno v:
Applied Optics. 36:1592
The technology of x-ray W-Al multilayer mirrors with an angular reflection width of more than 0.4 degrees at a 1.54-A wavelength is developed. On this basis an x-ray scanner is constructed. We show experimentally the possibility of object-transfer im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64e72b9864df96e0c67e09f4a8d8314c
https://doi.org/10.1364/ao.36.001592
https://doi.org/10.1364/ao.36.001592
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1488
In this report the experimental results of the resist silylation and O2‐plasma development are presented. The Soviet commercial novolac based photoresists of both positive and negative type and gas phase silylation in hexamethyldisilazane (HMDS) we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c6f70bdaeae5896994cffcafffd1d1
https://doi.org/10.1116/1.585102
https://doi.org/10.1116/1.585102
Publikováno v:
Microelectronic Engineering. 3:339-347
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fa3cad6bea9ca0be6f4ebd8a8bebe81
https://doi.org/10.1016/0167-9317(85)90044-9
https://doi.org/10.1016/0167-9317(85)90044-9