Zobrazeno 1 - 4
of 4
pro vyhledávání: '"L. V. Shekhovtsov"'
Autor:
N. E. Korsunskaya, G. N. Semenova, S. Yu. Sapko, Yu. G. Sadof’ev, L. V. Shekhovtsov, E. F. Venger, M. P. Semtsiv
Publikováno v:
Technical Physics Letters. 26:190-192
The spectral characteristics and transverse distribution of the photo emf were studied in a heteroepitaxial ZnSe-GaAs structure obtained by MBE on a zinc-stabilized GaAs(100) substrate surface. The spectral measurements revealed unusual manifestation
Publikováno v:
Scopus-Elsevier
The distribution of the transverse photovoltage has been investigated in samples of a Ge-GaAs heterostructure with an oxide layer (∼15 A) at the interface. A method of simultaneous excitation with modulated and unmodulated radiation is used to obse
Publikováno v:
SPIE Proceedings.
For some semiconductor crystals and structures the intrinsic mechanical stresses due to the nonuniform dopant distribution were investigated. p-Ge crystals with layered nonuniformities, Si wafers and Ge - GaAs heterostructures served as model samples
Autor:
L. V. Shekhovtsova, O. А. Osipova, Zh. Yu. Chefranova, I. B. Kovalenko, Yu. A. Lykov, I. V. Avdeeva
Publikováno v:
Кардиоваскулярная терапия и профилактика, Vol 19, Iss 5 (2020)
Aim. To compare the effect of long-term therapy with mineralocorticoid receptor antagonists (MCRA) on markers of electrophysiological instability in patients with heart failure with mid-range ejection fraction (HFmrEF) after ST-segment elevation acut
Externí odkaz:
https://doaj.org/article/6a4bbf31d9794468954e70ae5873b322