Zobrazeno 1 - 10
of 11
pro vyhledávání: '"L. V. Maneeshya"'
Publikováno v:
Optical Materials. 46:304-309
The structural, optical and visible photoluminescence of the Erbium (Er) doped BaTiO3 (BT:Er) thin films were studied in terms of Er3+ substitutions for Ba and Ti sites with different Er3+ doping concentrations (0, 1, 3 and 5 wt%). X-ray diffraction
Publikováno v:
Journal of Materials Science: Materials in Electronics. 26:2947-2954
BaTiO3 thin films were deposited onto quartz substrates by RF magnetron sputtering. X-ray diffraction pattern showed the formation of BT thin films with a tetragonal structure with orientations along (101) plane. Average crystallite size increased fr
Effects of annealing temperature on the photoluminescence of RF sputtered Barium titanate thin films
Publikováno v:
Materials Science in Semiconductor Processing. 30:688-693
BaTiO3 thin films were deposited onto quartz substrates by an RF magnetron sputtering method. The films deposited at room temperature and annealed at 773–1173 K were characterized using X-ray diffraction (XRD)Scanning electron microscopy (SEM), UV
Publikováno v:
Materials Today: Proceedings. 2:992-996
The present study reports the deposition and characterization of Er 3+ (Er) doped BaTiO 3 (BT: Er) thin films obtained onto quartz substrates by RF magnetron sputtering method. BT films with different Er 3+ concentrations (1, 3 and 5 wt %) were annea
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:2507-2515
BaTiO3:Eu (BT:Eu) thin films were deposited onto quartz substrates by RF magnetron sputtering. The effect on structural, morphological, optical and photoluminescence (PL) properties in the films with different Eu concentrations (0–5 wt%) were inves
Publikováno v:
Journal of Luminescence. 132:3077-3081
Al doped ZrO 2 thin films were deposited on quartz substrates by sol–gel dip coating technique. X-ray diffraction pattern showed the deterioration of the crystallinity of the films with increase in Al doping concentration due to the formation of st
Publikováno v:
Indian Journal of Physics. 87:33-38
Tin oxide thin films were prepared by sol–gel dip coating technique using Tin(II) chloride dihydrate (SnCl2·2H2O) as the precursor. X-ray diffraction pattern of SnO2 thin film annealed at 450 °C showed tetragonal phase with a particle size 8.2 nm
Autor:
Prabitha B. Nair, Georgi P. Daniel, L. V. Maneeshya, S. Sujatha Lekshmy, I. John Berlin, P.V. Thomas, K. Joy, V. S. Anitha
Publikováno v:
Journal of Materials Science: Materials in Electronics. 24:848-854
Homogeneous and transparent BaTiO3 thin films were prepared by sol–gel dip coating method. The prepared BaTiO3 thin films were annealed in air and O2 atmosphere at different temperatures. The annealed BaTiO3 thin films were amorphous in nature. Sca
Publikováno v:
Thin Solid Films. 520:2683-2688
ZrO 2 thin films were deposited on quartz substrates from 10 wt.%, 20 wt.% and 40 wt.% solutions of Zirconium-n-butoxide in isopropanol by sol–gel dip-coating technique. Higher concentrated sols of 20 wt.% and 40 wt.% exhibited faster gelation, whe
Publikováno v:
AIP Conference Proceedings.
Undoped and Fe doped TiO2 thin films have been prepared by RF magnetron sputtering. Pure TiO2 thin film exhibited an amorphous-like nature. With increase in iron concentration (0–0.1 at%), the films exhibited better crystallization to anatase phase