Zobrazeno 1 - 10
of 30
pro vyhledávání: '"L. V. Danilov"'
Autor:
Yu. P. Yakovlev, L. V. Danilov, Maya P. Mikhailova, E. V. Ivanov, P.S. Kop'ev, K. V. Kalinina
Publikováno v:
Semiconductors. 54:1527-1547
The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec63b713f226c258938e793f6854c2a2
https://doi.org/10.1134/s1063782620120210
https://doi.org/10.1134/s1063782620120210
Publikováno v:
Semiconductors. 54:1820-1822
We report on the unusually large blue shift of electroluminescence spectrum with increase of the drive current at 77 K in a double-barrier nanoheterostructure with a deep AlSb/InAs0.83Sb0.17/AlSb quantum well grown by MOVPE on n-GaSb:Te substrate. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e71b682250808a3e72fb28ba63e9aa5b
https://doi.org/10.1134/s1063782620140055
https://doi.org/10.1134/s1063782620140055
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE
Autor:
R. V. Levin, Maya P. Mikhailova, I. A. Andreev, E.V. Kunitsyna, Yu. P. Yakovlev, L. V. Danilov, E. V. Ivanov
Publikováno v:
Semiconductors. 53:46-50
The electroluminescent characteristics of a type-II n-GaSb/n-InAs/p-GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::392beb87c576bb4e21af5f345243264f
https://doi.org/10.1134/s1063782619010159
https://doi.org/10.1134/s1063782619010159
Autor:
Maya P. Mikhailova, L. V. Danilov, Yu. P. Yakovlev, B. V. Pushnyi, R. V. Levin, E.V. Kunitsyna, G. G. Konovalov, I. A. Andreev, N. D. Il’inskaya, E. V. Ivanov
Publikováno v:
Semiconductors. 52:1037-1042
Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n-GaSb/InAs/p-GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epitaxy. A sharp increase in the photocurre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f207cdb23bdf65fef32957c4c4c305f5
https://doi.org/10.1134/s1063782618080146
https://doi.org/10.1134/s1063782618080146
Autor:
R. V. Levin, L. V. Danilov, G. G. Konovalov, I. A. Andreev, G. G. Zegrya, B. V. Pushnyi, Maya P. Mikhailova, E. V. Ivanov
Publikováno v:
Semiconductors. 52:493-496
n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2165ec4f98149a4f993bd62548793aae
https://doi.org/10.1134/s1063782618040115
https://doi.org/10.1134/s1063782618040115
Autor:
Eduard Hulicius, M. O. Safonchik, Alice Hospodková, R. V. Parfeniev, L. V. Danilov, V. A. Berezovets, Jiří Pangrác, M. P. Mikhailova
Publikováno v:
Semiconductors. 51:1343-1349
Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well (QW) grown by MOVPE on an n-InAs (100) substrate is investigated in quantizing magnetic fields up to B = 14 T at low temperatures T = 1.5 and 4.2 K. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2042f0f276a70ff0d2782fbf2bf86cfd
https://doi.org/10.1134/s1063782617100141
https://doi.org/10.1134/s1063782617100141
Publikováno v:
Semiconductors. 51:1148-1152
The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoretically analyzed. It is shown for the example
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::688729f97f569d95f698ca0414d79667
https://doi.org/10.1134/s1063782617090081
https://doi.org/10.1134/s1063782617090081
Autor:
M. P. Mikhailova, L. V. Danilov, A. A. Petukhov, Georgy G. Zegrya, Evgenii Ivanov, Yu. P. Yakovlev
Publikováno v:
Semiconductors. 50:778-784
The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d819a1ebb34af11590b61e23733333
https://doi.org/10.1134/s1063782616060038
https://doi.org/10.1134/s1063782616060038
Autor:
E. V. Ivanov, L. V. Danilov, Yu. P. Yakovlev, A. A. Pivovarova, P. S. Kop’ev, Maya P. Mikhailova, K. V. Kalinina
Publikováno v:
Journal of Applied Physics. 126:235703
We report on the unusually large blue shift of the electroluminescence spectrum with an increase of the drive current at 77 K in a double-barrier nanoheterostructure with a deep AlSb/InAs0.83Sb0.17/AlSb quantum well grown by metal-organic vapor phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8962acbf4354edf380274e9bc15e5f2f
https://doi.org/10.1063/1.5131027
https://doi.org/10.1063/1.5131027
Autor:
Georgy G. Zegrya, L. V. Danilov
Publikováno v:
Semiconductors. 47:1336-1345
The role of electron-electron interaction in the process of electron capture to a deep quantum well is investigated. Using two-level and three-level quantum wells as examples, the basic electron-capture mechanisms, i.e., the interaction with optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::528c342c61936927c4c64e5d0261fe5f
https://doi.org/10.1134/s1063782613100072
https://doi.org/10.1134/s1063782613100072