Zobrazeno 1 - 9
of 9
pro vyhledávání: '"L. V. Borkovskaya"'
Autor:
Yu. G. Sadofyev, Ye.Yu. Braylovsky, M. Sharibaev, Ye.F. Venger, L. V. Borkovskaya, M.P. Semtsiv, Nadezhda E. Korsunskaya, G. N. Semenova
Publikováno v:
Materials Science and Engineering: B. 80:193-196
The effect of electron and X-ray irradiation on the optical characteristics of CdZnTe/ZnTe quantum-size structures has been investigated. A comparison between the results of both irradiations has shown an essential role of electron excitation in radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d59da44c6d33920b1a88d5aa1c90f6
https://doi.org/10.1016/s0921-5107(00)00629-2
https://doi.org/10.1016/s0921-5107(00)00629-2
Autor:
B. R. Dzhymaev, Moissei K. Sheinkman, I. V. Markevich, L. V. Borkovskaya, A.F. Singaevsky, Nadezhda E. Korsunskaya
Publikováno v:
Acta Physica Polonica A. 94:255-259
A role of mobile defects in processes responsible for II—VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6275f6e9aebc032625a8efc13e7d666d
https://doi.org/10.12693/aphyspola.94.255
https://doi.org/10.12693/aphyspola.94.255
Autor:
I. V. Markevich, B. R. Dzhymaev, N. E. Korsunskaya, L. V. Borkovskaya, Moissei K. Sheinkman, A.F. Singaevsky, I. A. Drozdova
Publikováno v:
Scopus-Elsevier
ResearcherID
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6484aa78f3a68a34e17ef0a3e44dc497
https://doi.org/10.4028/www.scientific.net/msf.196-201.1467
https://doi.org/10.4028/www.scientific.net/msf.196-201.1467
Autor:
Nadezhda E. Korsunskaya, L.Yu. Khomenkova, B. R. Dzhumaev, L. V. Borkovskaya, I. V. Markevich
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impuriti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c9ffd92faf24ffcd4be4e152a882d7f
https://doi.org/10.1109/asdam.2000.889478
https://doi.org/10.1109/asdam.2000.889478
Autor:
G. N. Semenova, E. F. Venger, M.P. Semtsiv, B. Embergenov, M. Sharibaev, L. V. Borkovskaya, Nadezhda E. Korsunskaya, Yu. G. Sadof’ev, Vasily P. Klad'ko
Publikováno v:
SPIE Proceedings.
V The effect of the 5 am thick ZnTe intermediate layers obtained by solid phase crystallization at growth temperature on the optical properties of ZnTe epilayers grown by molecular beam epitaxy (MBE) on (100) GaAs substrates has been investigated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0a8ac67cd68a5cc249b26626ada1ee4
https://doi.org/10.1117/12.368414
https://doi.org/10.1117/12.368414
Autor:
L. V. Borkovskaya, B. R. Dzhumaev, Nadezhda E. Korsunskaya, Yu. G. Sadof’ev, Vasily P. Klad'ko, B. Embergenov, G. N. Semenova, M. Sharibaev, M.P. Semtsiv, E. F. Venger
Publikováno v:
SPIE Proceedings.
In this work we report the depth inhomogeneity study of MBE grown ZnSe, CdZnTe and ZnTe/(001) GaAs epilayers of different thickness by x-ray and depth resolved photoluminescence methods. Step etching and different wavelength excitation were used for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::349bedc5ed524795d2a0dd169cc30841
https://doi.org/10.1117/12.368350
https://doi.org/10.1117/12.368350
Autor:
E. F. Venger, L. V. Borkovskaya, V. P. Kladko, Nadezhda E. Korsunskaya, Yu. G. Sadof’ev, M.P. Semtsiv, G. N. Semenova
Publikováno v:
Scopus-Elsevier
It was shown by the methods of X-ray diffraction and photoluminescence that the use of a thin inter- mediate recrystallized ZnTe layer between the ZnTe buffer layer obtained by molecular-beam epitaxy and GaAs substrate, as well as an increase in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::821ca1214dc900373f52b36385f0db7d
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033631094&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033631094&partnerID=MN8TOARS
Autor:
Nadezhda E. Korsunskaya, B. R. Dzhumaev, Grigory S. Pekar, L. V. Borkovskaya, Aleksandr F. Singaevsky, V. P. Papusha
Publikováno v:
Scopus-Elsevier
ResearcherID
ResearcherID
The processes of gradual degradation as well as the destruction processes of high power electron beam pumped lasers havebeen studied. The main reason of gradual degradation has been shown to be the increase of dislocation density due tothermoelastic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::849dc6775c86b18796f4fa8fe8efa642
http://www.scopus.com/inward/record.url?eid=2-s2.0-0346874435&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0346874435&partnerID=MN8TOARS
Autor:
S. Yu. Sapko, G. N. Semenova, M.P. Semtsiv, V. P. Kladko, L. V. Borkovskaya, Nadezhda E. Korsunskaya, Yu. G. Sadof’ev, E. F. Venger, L.V Shechovtsov
Publikováno v:
Scopus-Elsevier
The near-surface morphology, crystalline quality and contamination as well as depth and lateral homogeneity of background impurities and defects distribution in undoped ZnSe and ZnTe films grown by molecular beam epitaxy on GaAs(001) substrates were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f845de1b2bb220c758a08902bc12f10f
http://www.scopus.com/inward/record.url?eid=2-s2.0-33645137928&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-33645137928&partnerID=MN8TOARS