Zobrazeno 1 - 10
of 11
pro vyhledávání: '"L. V. Arapkina"'
Autor:
K. V. Chizh, L. V. Arapkina, V. P. Dubkov, D. B. Stavrovskii, V. A. Yuryev, M. S. Storozhevykh
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 58:616-625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c62274ac3bcc6ad3c5e6f4abcb8916
https://doi.org/10.3103/s8756699022060036
https://doi.org/10.3103/s8756699022060036
Publikováno v:
Автометрия. 58:79-89
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b80f7a7c943bcb31573f75473b710c1
https://doi.org/10.15372/aut20220610
https://doi.org/10.15372/aut20220610
Autor:
V. V. Voronkov, L. V. Arapkina, V. N. Golovina, A. S. Gulyaeva, N. B. Tyurina, M. G. Mil’vidskii, G. I. Voronkova, A. V. Batunina
Publikováno v:
Physics of the Solid State. 44:727-731
Czochralski-grown nitrogen-doped silicon crystals contain shallow thermal donors (STD) which are not present in reference crystals. In the course of annealing at 600 or 650°C, the STD concentration reaches saturation and this concentration scales wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0646b99030f7e197803a7f81903209fa
https://doi.org/10.1134/1.1470566
https://doi.org/10.1134/1.1470566
Autor:
V. N. Golovina, A. V. Batunina, Robert Falster, M. G. Milvidski, M. Porrini, Roberto Scala, Vladimir V. Voronkov, P. Collareta, L. V. Arapkina, M.G. Pretto, A.S. Guliaeva, G. I. Voronkova
Publikováno v:
Journal of Applied Physics. 89:4289-4293
Silicon crystals doped with nitrogen from the melt contain shallow thermal donors (STDs) detected both optically and electrically. Annealing samples at 600 and 650 °C results in a saturated STD concentration that depends on the nitrogen concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd2f214dd38d9b14f809094f20af6aa
https://doi.org/10.1063/1.1356436
https://doi.org/10.1063/1.1356436
Autor:
N. B. Tyurina, G. I. Voronkova, A. V. Batunina, M. G. Mil’vidskii, L. V. Arapkina, A. S. Gulyaeva, V. V. Voronkov, V. N. Golovina
Publikováno v:
Physics of the Solid State. 42:2022-2029
The generation of low-temperature thermal donors (TD) in silicon is sensitive to the sample cooling rate (from the anneal to room temperature) and the ambient (air or vacuum). This effect is most clearly pronounced in the case of annealing at 500°C,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a814aeef9334fc47c31603dff3bcd10
https://doi.org/10.1134/1.1324035
https://doi.org/10.1134/1.1324035
Autor:
L. V. Arapkina, V. A. Yuryev
Publikováno v:
Journal of Applied Physics. 111:094307
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of {105}-faceted c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e48a87463b75b49a00cf5bdbeade561
https://doi.org/10.1063/1.4707936
https://doi.org/10.1063/1.4707936