Zobrazeno 1 - 1
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pro vyhledávání: '"L. Ungler"'
Publikováno v:
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021abcdad8dd233c5a9adef61e4ba1aa
https://doi.org/10.1109/cornel.1995.482438
https://doi.org/10.1109/cornel.1995.482438
