Zobrazeno 1 - 10
of 19
pro vyhledávání: '"L. T. Ter-Martirosyan"'
Autor:
J. Hagberg, S. F. Karmanenko, A. I. Dedyk, L. T. Ter-Martirosyan, A. S. Gordeichuk, N. N. Isakov, Alexander A. Semenov
Publikováno v:
Technical Physics. 46:498-502
Capacitance voltage and current voltage characteristics of BSTO ferroelectric films containing a manganese dioxide impurity (∼1.5–2 mol%) are compared to those of impurity-free samples. It is shown that in Mn-doped samples tan δ drops to 10−3,
Autor:
Orest Vendik, L. T. Ter-Martirosyan
Publikováno v:
Journal of Applied Physics. 87:1435-1439
Charged grain boundaries between crystalline blocks in bulk and thin film samples of incipient ferroelectrics are considered as charged defects producing a built-in electric field which is treated as a statistical dispersion of the biasing field. The
Autor:
O. G. Vendik, L. T. Ter-Martirosyan
Publikováno v:
Technical Physics. 44:954-959
An analysis is made of the dielectric losses in the microwave range in a planar ferroelectric capacitor caused by electrostrictively excited sound in the ferroelectric in the presence of a bias field (induced piezoeffect). An approximate expression i
Autor:
I. T. Serenkov, S.F. Karmanenko, L. T. Ter-Martirosyan, A. Uusimak, Fan Wang, V. I. Sakharov, A.A. Semenov, A. I. Dedyk, Seppo Leppävuori
Publikováno v:
Scopus-Elsevier
Ferroelectric Ba x Sr 1-x TiO 3 (BSTO) films were prepared on sapphire (r-cut) and MgO substrates using two preparation processes- RF sputtering and the sol-gel method. The structure of the films and interfaces were investigated by middle energy ion
Publikováno v:
Journal of Applied Physics. 84:993-998
The dielectric constant of ferroelectric materials can be controlled by an applied electric field. That is promising for applications using the microwave technique. The widespread use of ferroelectric materials at microwaves is retarded by a consider
Autor:
S. F. Karmanenko, Alexander A. Semenov, L. T. Ter-Martirosyan, V T Barchenko, A V Lunev, A. I. Dedyk, R. A. Chakalov
Publikováno v:
Superconductor Science and Technology. 11:284-287
Superconductor/ferroelectric (SF) and normal conducting metal/ferroelectric (NF) film structures were grown using DC and RF magnetron sputtering of ceramic and targets. Low-energy ion beam etching was used for patterning an SF planar capacitor with a
Publikováno v:
physica status solidi (a). 162:607-613
The effect of the current pulse bias on the electrical characteristics and surface morphology of YBCO films during the time 70 to 300 h at T = 78 K has been investigated. The YBCO films were deposited onto an Al 2 O 3 (r-cut) substrate with CeO 2 buf
Autor:
M. V. Pavlovskaya, L. T. Ter-Martirosyan, M. V. Belousov, K F Njakshev, Yu V Likholetov, S. F. Karmanenko, A. I. Dedyk, R. A. Chakalov, V. Yu. Davydov
Publikováno v:
Superconductor Science and Technology. 7:727-733
Superconductor-ferroelectric-superconductor (SFS) structures were produced by magnetron sputtering of ceramic YBa2Cu3O7- delta and BaxSr1-xTiO3 targets. Raman spectroscopy was effectively used for characterization of superconducting and ferroelectric
Publikováno v:
Ferroelectrics. 144:77-81
The dielectric hysteresis (DH) of structures based on the single crystal SrTiO3 is the stable change of initial structure capacitance after the bias voltage influence. Experimental research of DH were carried out with the different conditions on the
Publikováno v:
Ferroelectrics. 144:33-43
The initial success in high-T c superconductivity applications at microwaves leads to the creation of new branch in microwave electronics operating at liquid nitrogen temperature. In this connection one should reconsider the behaviour of nonlinear di