Zobrazeno 1 - 7
of 7
pro vyhledávání: '"L. T. Claiborne"'
Publikováno v:
Applied Physics Letters. 82:3185-3187
Multispectral detector arrays for application in the 8–11 μm spectral band have been fabricated from GaAs/AlGaAs multiple quantum-well (MQW) materials. For efficient narrow-band coupling of the infrared radiation, three-dimensional diffractive res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2372ead8cc976e4a4f74a657e7f027a8
https://doi.org/10.1063/1.1573354
https://doi.org/10.1063/1.1573354
Publikováno v:
Semiconductor Science and Technology. 8:S205-S210
A modified approach for epitaxial growth of HgCdTe (MCT) by isothermal vapour phase epitaxy (ISOVPE) under high hydrogen pressure is reported. The growth and anneal are carried out in a re-usable and demountable internally heated high-pressure furnac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79969f6b2e7f75f741d412185b7c8e54
https://doi.org/10.1088/0268-1242/8/1s/045
https://doi.org/10.1088/0268-1242/8/1s/045
Publikováno v:
Applied Physics Letters. 68:2846-2848
An enhanced quantum well infrared photodetector (EQWIP) with lower dark current and improved performance relative to a conventional QWIP is described. Dark current reduction and external quantum efficiency improvements are achieved by novel structura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3972f50d366855d96206df6c1b8bb626
https://doi.org/10.1063/1.116344
https://doi.org/10.1063/1.116344
Autor:
W.R. Smith, D.P. Morgan, Clinton S. Hartmann, J.B. Harrington, Roni Rosenfeld, J. Wooldridge, W.R. Jones, J. Burnsweig, E.A. Ash, Iain M. Mason, J.D. Holmes, E.J. Staples, S. Ludvik, C.O. Newton, Paul Lagasse, F.G. Marshall, W.R. Shreve, D.K. Winslow, R.V. Ridings, D.T. Bell, L. T. Claiborne, G.S. Kino, R. C. Williamson, J.H. Collins, A.G. Bert, G. Kantorowicz, B.J. Darby, H.M. Gerard, E.G.S. Paige, T.A. Martin, H. van de Vaart, H.J. Shaw, Peter Grant, Joseph M. White, L.R. Schissler, Henry I. Smith, B. Epsztein
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 21:307-312
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41026dea2091a4df26c1362442d45b2
https://doi.org/10.1109/tmtt.1973.1127984
https://doi.org/10.1109/tmtt.1973.1127984
Publikováno v:
Applied Physics Letters. 19:58-60
The piezoresistance effect in Si MOSFET p‐channel inversion layers is utilized for the detection of elastic surface waves. Theoretical results for detector sensitivity are described. It is shown that arrays of such detectors can be used for program
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a12f171bf8dc3ca15f1a8ecd945800db
https://doi.org/10.1063/1.1653821
https://doi.org/10.1063/1.1653821
Publikováno v:
1975 Ultrasonics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::475ab35ba036d3438475dcd31e1b4f9c
https://doi.org/10.1109/ultsym.1975.196538
https://doi.org/10.1109/ultsym.1975.196538
Publikováno v:
1970 International Electron Devices Meeting.
The silicon p-channel MOSFET has previously been characterized as a piezoresistive element. Since g m of the device varies with applied stress through modulation of surface-carrier mobility, it becomes of interest to examine the response of the devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bec53c64abdfa0339035b0c8cd0a7fb
https://doi.org/10.1109/iedm.1970.188275
https://doi.org/10.1109/iedm.1970.188275