Zobrazeno 1 - 10
of 10
pro vyhledávání: '"L. S. Khludkova"'
Autor:
N. K. Maksimova, B. O. Kushnarev, L. S. Khludkova, A. A. Biryukov, E. Yu. Sevast’yanov, E. V. Chernikov
Publikováno v:
Technical Physics. 66:999-1008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ffc73fcb57cadb2e8c3971f4bbf66c
https://doi.org/10.1134/s1063784221070094
https://doi.org/10.1134/s1063784221070094
Autor:
N. K. Maksimova, L. S. Khludkova, A. I. Potekaev, T. A. Davydova, E. V. Chernikov, E. Yu. Sevast’yanov
Publikováno v:
Russian Physics Journal. 60:1739-1746
The results of studies of electrical and gas sensitive characteristics of acetone sensors based on thin nanocrystalline SnO2 films with various catalysts deposited on the surface (Pt/Pd, Au) and introduced into the volume (Au, Ni, Co) are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f60a0da09adb1a2ae9f0fdf1fed60ef
https://doi.org/10.1007/s11182-018-1276-y
https://doi.org/10.1007/s11182-018-1276-y
Publikováno v:
BioNanoScience. 7:654-658
The electrical and gas-sensitive characteristics of sensors based on nanocrystalline SnO2 thin films with noble metals (Pt, Pd, Au) and 3d-transition metals (Co, Ni) additives in the bulk and on the surface have been studied. Thin (~100 nm) tin dioxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f7252bab63272d18437507e0c3f9c2
https://doi.org/10.1007/s12668-016-0377-8
https://doi.org/10.1007/s12668-016-0377-8
Autor:
V. Yu. Gritsyk, A. V. Panin, S. S. Nazarov, V. I. Balyuba, L. S. Khludkova, V. M. Kalygina, T. A. Davydova
Publikováno v:
Semiconductors. 40:1436-1441
We study the effect of thermal annealing in the range of 200–610°C on the sensitivity and time dependences of the response of the Pd-SiO2-n-Si diodes to hydrogen and ammonia. The postannealing surface of a Pd electrode was examined using atomic fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c56abce73a0cfd4caac250f89d3fa4b
https://doi.org/10.1134/s1063782606120128
https://doi.org/10.1134/s1063782606120128
Publikováno v:
Russian Physics Journal. 44:1133-1138
Results of an experimental investigation into the influence of short-term (10 min) thermal annealing of MOS tunnel diodes on their electrical properties and capacitance, admittance, and flat-band voltage responses to the action of hydrogen are presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995031ce95acd548581beee86d4cd375
https://doi.org/10.1023/a:1015355121352
https://doi.org/10.1023/a:1015355121352
Autor:
L. S. Khludkova, V. P. Voronkov
Publikováno v:
Semiconductors. 33:1111-1114
The effect of hydrogen on the current-voltage characteristics of palladium-semiconductor barrier structures based on the solid solutions In0.92Ga0.08As0.17P0.83 and In0.53Ga0.47As is investigated. The hydrogen-induced kinetics of the change in the cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938e16285a1dc8ce2d5c5ab8b964c2cb
https://doi.org/10.1134/1.1187876
https://doi.org/10.1134/1.1187876
Publikováno v:
Russian Physics Journal. 42:38-46
The effect of an invertedp-region along the free surface ofn-AlxGa1−xSb on the reverse current ofp−n structures from the given solid solution is analyzed. Expressions which describe “collection” of the inverted layer current on the cylindrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14a73b4245453259f589401c14d93d0a
https://doi.org/10.1007/bf02508242
https://doi.org/10.1007/bf02508242
Publikováno v:
Soviet Physics Journal. 35:20-26
The manganese doping of In1−xGaxAsyP1-y(0 ≦ y ≦ 1) films grown by liquid-phase epitaxy has been investigated. A study has been made of the influence of the solid-solution composition and of the method of introducing the manganese into the solut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9bfb06a31bd6369f2d0ff49cc2d2b1c
https://doi.org/10.1007/bf01324978
https://doi.org/10.1007/bf01324978
Publikováno v:
Semiconductors. 36:1136-1137
The influence exerted by the thermal annealing of silicon, prior to the deposition of a palladium contact, on the hydrogen sensitivity of palladium-〈natural oxide〉-silicon structures was studied. It is shown that structures based on annealed sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27315e6333a8e2f9c360d3a587e566a
https://doi.org/10.1134/1.1513858
https://doi.org/10.1134/1.1513858
Publikováno v:
Soviet Physics Journal. 27:985-988
We study the variation of electron density n in depth of tellurium-doped epitaxial AlxGa1−xSb(As) (x = 0.15–0.20) layers. It is established that n decreases in proportion to the growth of the layer and, under definite conditions, the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2881da6b9ee6c824c22b8a68d6a9b439
https://doi.org/10.1007/bf00902157
https://doi.org/10.1007/bf00902157