Zobrazeno 1 - 9
of 9
pro vyhledávání: '"L. S. Chuah"'
Publikováno v:
Journal of Mechanical Engineering Research and Developments, Vol 42, Iss 3, Pp 35-46 (2019)
In the world that we live in today, non-renewable sources of energy are being depleted at an exponential rate. Thus, alternative sources of fuel have become more important to prevent the occurrence of an energy crisis. Seeing that hydrogen is not a s
Externí odkaz:
https://doaj.org/article/61334c8f008641e2af7d39efdb8e4b80
Publikováno v:
Nanoscience and Nanotechnology Letters. 8:505-509
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a558d5461200bc63c9bcdcc32ca44e0
https://doi.org/10.1166/nnl.2016.2058
https://doi.org/10.1166/nnl.2016.2058
Publikováno v:
Nanoscience and Nanotechnology Letters. 7:599-602
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52c397a4de37306555f0ecbc0351165a
https://doi.org/10.1166/nnl.2015.1737
https://doi.org/10.1166/nnl.2015.1737
Autor:
Zainuriah Hassan, L. S. Chuah
Publikováno v:
Nanoscience and Nanotechnology Letters. 6:515-518
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::689972fc8598d2eca15da75b94cc3637
https://doi.org/10.1166/nnl.2014.1784
https://doi.org/10.1166/nnl.2014.1784
Publikováno v:
Surface Review and Letters. 16(06):925-928
This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si(111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::030aad2be03ed0e9f30ca1724a93b98d
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X09013499
http://www.worldscinet.com/cgi-bin/details.cgi?type=html&id=pii:S0218625X09013499
Publikováno v:
Surface Review and Letters. 16(01):99-103
High-quality aluminum nitride (AlN) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::9049c6b5832955fd066f054a7bb1be50
http://www.worldscinet.com/cgi-bin/details.cgi?type=pdf&id=pii:S0218625X09012354
http://www.worldscinet.com/cgi-bin/details.cgi?type=pdf&id=pii:S0218625X09012354
Publikováno v:
Surface Review and Letters. 15(05):699-703
PN photodiodes, as an alternative form of photodetectors, is based on carrier production in the high-field junction region, and it has a response time considerably faster than that of a photoconductor and is typically in the order of nanoseconds. Pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::58301a320801aebe451c13ab4a18c1ee
http://www.worldscinet.com/cgi-bin/details.cgi?type=pdf&id=pii:S0218625X08011871
http://www.worldscinet.com/cgi-bin/details.cgi?type=pdf&id=pii:S0218625X08011871
Publikováno v:
AIP Conference Proceedings.
Porous silicon (PSi) samples were prepared using photoelectrochemical method on n‐type silicon wafer with (111) orientation. To prepare porous structures, the samples were dipped into a mixture of HF:Ethanol (1:1) for 15 and 30 minutes with current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::794ee708ccae4ac961d22fe528f32b74
https://doi.org/10.1063/1.3469686
https://doi.org/10.1063/1.3469686
Surface Morphology and Formation of Nanostructured Porous GaN by UV-assisted Electrochemical Etching
This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::549f66d6db7aac404ef13db38a1791f1
