Zobrazeno 1 - 10
of 49
pro vyhledávání: '"L. S. Berman"'
Autor:
L. S. Berman
Publikováno v:
Input-Output in the United Kingdom ISBN: 9781351131278
Input-Output in the United Kingdom
Input-Output in the United Kingdom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::927f37895944ebe75fa215c037378978
https://doi.org/10.4324/9781351131278-2
https://doi.org/10.4324/9781351131278-2
Autor:
L. S. Berman
Publikováno v:
Semiconductors. 39:313-316
The depolarization in a metal-p-ferroelectric-n-semiconductor structure is calculated based on an analysis of the experimental parameters of a ferroelectric hysteresis loop in a metal-ferroelectric-metal structure. For a semiconductor, the Poisson eq
Autor:
I. E. Titkov, L. S. Berman
Publikováno v:
Semiconductors. 38:683-688
Structural defects at the interface between Pb0.95La0.05Ti0.8Zr0.2O3 and La1.85Sr0.15CuO4 were studied using the method of isothermal current relaxation. Two cases were considered: (a) the width of the defect-containing layer is much smaller than the
Autor:
L. S. Berman
Publikováno v:
Semiconductors. 36:659-662
In metal-insulator-semiconductor (MIS) structures with a thin dielectric layer, account must be taken of the effect of current through the insulator on the charge of surface states. The capture of carriers to surface states suppresses the thermal emi
Autor:
L. S. Berman
Publikováno v:
Semiconductors. 35:1335-1339
Current-voltage (I-V) characteristics of an all-perovskite ferroelectric-semiconductor field-effect transistor (FET) were simulated. The modeling is based on an analysis of an experimental hysteresis loop of a metal-ferroelectric-metal structure. The
Publikováno v:
Semiconductors. 34:786-789
A method for determining the energy spectrum of charges and surface-state densities at the interfaces of semiconductor-insulator-semiconductor structures was developed; the method is based on the analysis of capacitance-voltage characteristics. The m
Autor:
A. D. Gabaraeva, L. S. Berman, O V Smolsky, I. N. Karimov, L. V. Sharonova, N. M. Shmidt, D V Denisov, A. V. Kamanin
Publikováno v:
Semiconductor Science and Technology. 11:1688-1691
A comparative study of InP and Si surfaces passivated by has been carried out in order to single out the effects associated with the structural peculiarities of the insulator. has been deposited on InP and Si simultaneously at low temperature. Moreov
Autor:
L. S. Berman
Publikováno v:
Semiconductors. 35:193-195
The hysteresis in the dependence of the polarization P on the electric field E was simulated for a metal-ferroelectric-semiconductor structure with a perovskite semiconductor. The simulation is based on the analysis of an experimental P(E) hysteresis
Publikováno v:
Technical Physics Letters. 25:32-34
An investigation was made to determine how a regular relief on the silicon surface influences gettering in silicon-silicon-dioxide structures. The regular relief was created by a photolithographic technique before oxidation and comprised an orthogona
Autor:
L.S. Kostina, T.V. Kudravtzeva, E.I. Beliakova, E. D. Kim, I.V. Grekhov, S. C. Kim, J.M. Park, L. S. Berman
Publikováno v:
1996 54th Annual Device Research Conference Digest.
We have proposed a novel modification of silicon direct bonding (SDB) technique dealing with silicon wafers joined in such a way that a smooth surface of one wafer is attached to the grooved surface of the other. This paper presents some experimental