Zobrazeno 1 - 10
of 27
pro vyhledávání: '"L. Rivaud"'
Autor:
J P Lavine, L Rivaud
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2872f8ec65144436543430806ef3e060
https://doi.org/10.1201/9781003069621-75
https://doi.org/10.1201/9781003069621-75
Akademický článek
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Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:2180-2182
Hexagonal‐structure polycrystalline Ta2N films with (2131) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N2 atmospheres. Transmission electron microscopy examination of Ta2N films grown on BaF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9c678f916fcc6aa417d9611068bbf70
https://doi.org/10.1116/1.577247
https://doi.org/10.1116/1.577247
Akademický článek
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Publikováno v:
Journal of The Electrochemical Society. 135:437-442
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d9a82091cc72a40dc053ce96ec135c
https://doi.org/10.1149/1.2095633
https://doi.org/10.1149/1.2095633
Publikováno v:
Journal of Applied Physics. 54:982-986
Atomic absorption spectroscopy combined with controlled chemical etching and Auger electron spectroscopy profiling with ion beam etching have been used to obtain composition versus depth analyses of Cu2S/(Zn,Cd)S heterojunction solar cells formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54024697f201ce0ae4e82765cd1a2b4e
https://doi.org/10.1063/1.332024
https://doi.org/10.1063/1.332024
Publikováno v:
Radiation Effects. 61:83-92
Scanning transmission electron microscopy and Auger electron spectroscopy were used to investigate the effects of low energy (200–3000 eV) Ar+ ion bombardment of supersaturated Cu: In alloys. Ion bombardment always resulted in the preferential sput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26cf1ad44cc20d8ea6e02f691767b5a
https://doi.org/10.1080/00337578208225736
https://doi.org/10.1080/00337578208225736
Autor:
G. Hawkins, L. Rivaud
Publikováno v:
Review of Scientific Instruments. 56:563-566
An apparatus is described for wet chemical etching of silicon specimens for transmission electron microscopy. This etch chamber thins the central portion of a 3‐mm disk to a specified thickness (1–50 μm) in a controlled and reproducible manner.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f79e0fabb2a090b29024e5c7357f1ebd
https://doi.org/10.1063/1.1138288
https://doi.org/10.1063/1.1138288
Publikováno v:
MRS Proceedings. 70
Silicide formation by reaction of palladium metal (Pd0) with hydrogenated amorphous silicon (a-Si:H) substrates was studied with Rutherford backscattering spectrometry (RBS), forward recoil spectrometry, x-ray photoelectron spectroscopy (XPS), and tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9be48af62669579ea503026b57ab8ec6
https://doi.org/10.1557/proc-70-387
https://doi.org/10.1557/proc-70-387
Publikováno v:
SPIE Proceedings.
Auger electron and atomic absorption spectroscopies (AES and AAS) have been used to measure compositions of Cu2S/ZnxCd1-xS heterojunctions. A Zn rich region near the Cu2S-ZnCdS interface is verified by both techniques. For Cu2S films grown by aqueous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6fecaa895b9d4c1cb0bf0a3abf53047
https://doi.org/10.1117/12.970587
https://doi.org/10.1117/12.970587