Zobrazeno 1 - 10
of 31
pro vyhledávání: '"L. Ravikiran"'
Publikováno v:
AIP Advances, Vol 7, Iss 1, Pp 015022-015022-11 (2017)
The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to f
Externí odkaz:
https://doaj.org/article/370a5457d6314b78b59b7716864015bf
Autor:
Nethaji Dharmarasu, Zilong Wang, Tng Lihuang, Kian Siong Ang, M. Agrawal, Annalisa Bruno, L. Ravikiran, Cesare Soci, K. Radhakrishnan
Publikováno v:
IEEE Sensors Journal. 17:72-77
For the development of GaN-based ultraviolet (UV) photodetectors, a simple epilayer structure consisting of GaN (600 nm)/AlN (200 nm) was grown on 100-mm Si substrate using ammonia-molecular beam epitaxy growth technique. The epilayers were crack-fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb34b7658e078819eb4ecaf12e944f56
https://doi.org/10.1109/jsen.2016.2622279
https://doi.org/10.1109/jsen.2016.2622279
Publikováno v:
2016 International Conference on Optical MEMS and Nanophotonics (OMN).
We report on the optical properties of highly doped Gallium Nitride (GaN:Si) layers in regard to plasmonic applications. Samples with different carrier concentrations were grown by PA-MBE and characterized by spectroscopic ellipsometry. Functions for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afeb14ba1610311103dca7349760f229
https://doi.org/10.1109/omn.2016.7565937
https://doi.org/10.1109/omn.2016.7565937
Autor:
M. Agrawal, L. Ravikiran, Nethaji Dharmarasu, Lin Yiding, K. Radhakrishnan, S. Vicknesh, Subramaniam Arulkumaran, Geok Ing Ng
To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b14910cca7513b94ed16bfe54ad5c5fd
https://hdl.handle.net/10356/107000
https://hdl.handle.net/10356/107000
Autor:
Arkal Vittal Hegde, L. Ravikiran
The paper presents the results of a series of experiments conducted on physical models of Quarter-circle breakwater (QBW) in a two dimensional monochromatic wave flume. The purpose of the experiments was to evaluate the reflection coefficient Kr of Q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0007d31b534ad6aa12c77f9e39b74e5e
Autor:
L. Ravikiran, M. Agrawal, Yuanjin Zheng, Giri Sadasivam Karthikeyan, K. Radhakrishnan, Nethaji Dharmarasu
Publikováno v:
AIP Advances, Vol 7, Iss 1, Pp 015022-015022-11 (2017)
The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c05fa6c998109f8e0d27d85d85cf0b67
https://doi.org/10.1063/1.4974074
https://doi.org/10.1063/1.4974074
Autor:
L. Ravikiran, Cesare Soci, Annalisa Bruno, Nethaji Dharmarasu, K. Radhakrishnan, Ang Kian Siong, Tng Lihuang, Zilong Wang, M. Agrawal
Publikováno v:
Semiconductor Science and Technology. 31:095003
GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa746e5f830e6867c12ad1e8e58156d
https://doi.org/10.1088/0268-1242/31/9/095003
https://doi.org/10.1088/0268-1242/31/9/095003
Autor:
L Ravikiran, Samreen Siddiqui, Kalyanasundaram Subramanian, Shweta Dubey, Jyoti Bajpai Dikshit, Sujeet Jha, Amit Bhargava, Shuba Krishna, Swati Waghdhare
Publikováno v:
The Lancet Diabetes & Endocrinology. 4:302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e2ed3a1b505e545a86c788cb9ef3e98
https://doi.org/10.1016/s2213-8587(16)00040-1
https://doi.org/10.1016/s2213-8587(16)00040-1
The structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm diameter Si (111) substrate by ammonia molecular beam epitaxy have been reported. High resolution X-ray diffraction, micro-Raman spectroscopy, transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dba0576dd55562638728f45c42377f0
http://hdl.handle.net/10220/10299
http://hdl.handle.net/10220/10299
Autor:
C. M. Manoj Kumar, Geok Ing Ng, L. Ravikiran, Nethaji Dharmarasu, M. Agrawal, S. Munawar Basha, K. Radhakrishnan, Subramaniam Arulkumaran
Publikováno v:
Journal of Applied Physics. 117:245305
The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::166b98ceba3a41f4b4a4476b48610729
https://doi.org/10.1063/1.4923035
https://doi.org/10.1063/1.4923035