Zobrazeno 1 - 10
of 17
pro vyhledávání: '"L. R. Logan"'
Autor:
Paul C. Parries, John E. Barth, James P. Norum, L. R. Logan, S.S. Iyer, J. P. Rice, D. Hoyniak
Publikováno v:
IBM Journal of Research and Development. 49:333-350
The Blue Gene®/L chip is a technological tour de force that embodies the system-on-a-chip concept in its entirety. This paper outlines the salient features of this 130-nm complementary metal oxide semiconductor (CMOS) technology, including the IBM u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd0575cd4a4bf0f7a09154d2c6b15c03
https://doi.org/10.1147/rd.492.0333
https://doi.org/10.1147/rd.492.0333
Publikováno v:
Radiation Effects and Defects in Solids. :175-186
Computer simulation studies of the energy distribution of transmitted ions such as alpha-particles, He-, and B-ions through crystalline silicon, using the enhanced binary-collision cascade simulator MARLOWE, will be reviewed. The enhancement includes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ddc554923b73ace6c485fa4d15c5dc3
https://doi.org/10.1080/10420159408219780
https://doi.org/10.1080/10420159408219780
Autor:
Anda Mocuta, Anthony I. Chou, Frank D. Tamweber, D. Lea, Jie Deng, J. A. Culp, Nivo Rovedo, H. Trombley, E. J. Nowak, Yue Liang, Woo-Hyeong Lee, K. Rim, B. A. Goplen, Sadanand V. Deshpande, William K. Henson, Brian J. Greene, Xiaojun Yu, Howard S. Landis, Dustin K. Slisher, L. R. Logan, Ming Cai, Oleg Gluschenkov, J. Sim, Paul Chang, Noah Zamdmer
Publikováno v:
2011 International Electron Devices Meeting.
We report a detailed study of the impact of systematic across-chip variation (ACV) on chip level power-performance. We propose a metric to capture impact of ACV on chip-level leakage quantitatively. Product power-performance can be optimized by minim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ed97952df8cc66bd5b5ecf557446110
https://doi.org/10.1109/iedm.2011.6131611
https://doi.org/10.1109/iedm.2011.6131611
Autor:
L R, LOGAN
Publikováno v:
Bulletin of the American College of Surgeons. 31(3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d673b1492ccbbba407e38881f75c320e
https://pubmed.ncbi.nlm.nih.gov/20276316
https://pubmed.ncbi.nlm.nih.gov/20276316
Publikováno v:
Physical Review A. 46:5754-5760
We present an analysis of the stopping power for helium in silicon taking into account the contributions due to different charge states. Our calculations include effects due to the nonuniformity of the target valence-electron density along specific c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::621a58173c247e4f3875723322cf511f
https://doi.org/10.1103/physreva.46.5754
https://doi.org/10.1103/physreva.46.5754
Publikováno v:
The Journal of Chemical Physics. 96:4574-4582
We present a methodology for calculating the thermodynamic and configurational properties of a classical system of N interacting particles. For solids we show how the method can be used to determine the structural properties in the equilibrium state.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c8b16617d29e2577d0490ed3f7c8078
https://doi.org/10.1063/1.462793
https://doi.org/10.1063/1.462793
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 48:159-162
We present the results of some quantum-mechanical theories for positron channeling. The objectives of this research include studying the fine-structure effects that occur in the quantum-mechanical regime. We have performed analytic channeling calcula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddef05bae71244a1cdd8febfddc208bb
https://doi.org/10.1016/0168-583x(90)90095-c
https://doi.org/10.1016/0168-583x(90)90095-c
Autor:
S.H. Ku, Myung-Hee Na, L. R. Logan, J. Friedrich, Richard Q. Williams, F. Clougherty, Gregory G. Freeman, Brian J. Greene, Noah Zamdmer, B. Dufrene, D. Slisher, Emmanuel F. Crabbe, E.J. Nowak, Q. Liang, Dureseti Chidambarrao, Scott K. Springer, Kevin McStay, Judith H. McCullen
Publikováno v:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Recently, 65 nm technology-based microprocessors have been introduced into high-end products such as games processors and high- performance servers [1]. As technology development in the modern-day relies more and more on non-traditional performance-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90a731aa1758d3b3dcb132c31a14ad7b
https://doi.org/10.1109/asmc.2007.375097
https://doi.org/10.1109/asmc.2007.375097
Autor:
L R, Logan
Publikováno v:
Journal of clinical orthodontics : JCO. 35(10)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::011e8c1baffbbfc5105f2561d5705c49
https://pubmed.ncbi.nlm.nih.gov/11764607
https://pubmed.ncbi.nlm.nih.gov/11764607
Publikováno v:
Physical review. B, Condensed matter. 43(8)
En utilisant un formalisme de l'equation de Boltzman dependante au temps, on developpe un modele pour le transport electronique dans un materiau semiconducteur soumis aux champs electriques externes. Comme illustration de ce travail, on examine les p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48c2e3c12ebce486359ed7ae73c6918e
https://pubmed.ncbi.nlm.nih.gov/9998099
https://pubmed.ncbi.nlm.nih.gov/9998099