Zobrazeno 1 - 7
of 7
pro vyhledávání: '"L. R. Hite"'
Publikováno v:
IEEE Transactions on Nuclear Science. 37:1982-1989
The back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3473b05f6125754d1ef4839641c92b9c
https://doi.org/10.1109/23.101218
https://doi.org/10.1109/23.101218
Autor:
Michael L. Alles, L. R. Hite, S.E. Kerns, H. Lu, Lloyd W. Massengill, T. W. Houston, D.V. Kerns
Publikováno v:
IEEE Transactions on Nuclear Science. 36:2305-2310
A lumped-parameter model derived from transistor characterization data has been used in SPICE analyses to study and predict the single-event-upset thresholds for SIMOX SOI (separation by implantation of oxygen, silicon-on-insulator) SRAMs (static ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fc340498d5ba7e4ac8c20d0917064a6
https://doi.org/10.1109/23.45440
https://doi.org/10.1109/23.45440
Publikováno v:
IEEE Transactions on Nuclear Science. 31:1483-1486
A comprehensive study of the radiation hardness of the silicon MESFET technology using LOCOS isolation is reported. A MESFET 4K × 1 sRAM fabricated on bulk silicon using LOCOS isolation has essentially no change in performance through 28.5 Mrad(Si)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e153b88265ad3c208de00b3fd30deb
https://doi.org/10.1109/tns.1984.4333534
https://doi.org/10.1109/tns.1984.4333534
Publikováno v:
IEEE Transactions on Nuclear Science. 30:4277-4281
Silicon MESFET technology is an attractive candidate for a gamma dose hard FET technology suitable for digital logic and sRAM circuits. This paper describes the results of an evaluation of the total dose hardness of Si MESFET circuits of sufficient d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62235b873fbe8fe8ff721e206bd5f0b0
https://doi.org/10.1109/tns.1983.4333122
https://doi.org/10.1109/tns.1983.4333122
Autor:
Gordon P. Pollack, B.-Y. Mao, L. R. Hite, Mishel Matloubian, C.-E. Chen, K. Maley, Harold L. Hughes
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1702-1705
The total dose characteristics of CMOS devices fabricated in oxygen implanted buried oxide silicon-on-insulator (SOI) substrates with different post-implant annealing processes are studied. The threshold voltage shift, subthreshold slope degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abce8b9ec288d65493d108cffee8e66
https://doi.org/10.1109/tns.1986.4334668
https://doi.org/10.1109/tns.1986.4334668
Publikováno v:
IEEE Transactions on Nuclear Science. 32:4431-4437
This paper presents the first measurements of transient radiation effects on SOI discrete devices and an LSI memory. A commercially processed LSI SOI memory, a 4K × 1 SRAM on SIMOX, was tested for SEU, and transient ionizing radiation effects as a f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c87115c2c696acd3854e0e8412565b
https://doi.org/10.1109/tns.1985.4334137
https://doi.org/10.1109/tns.1985.4334137
Publikováno v:
Real-Time Signal Processing II.
CCD/NMOS analog sampled data signal processing technology is becoming sufficiently mature to warrant consideration for many signal processing functions. Similarly the desire for improved radar system performance has led to the development of many sop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab309ecd7cd2f70c9ede38e20545ade
https://doi.org/10.1117/12.957333
https://doi.org/10.1117/12.957333