Zobrazeno 1 - 3
of 3
pro vyhledávání: '"L. R. Hewitt"'
Autor:
J. H. Thomas, F. J. Tams, D. M. Hoffman, H. Gilmartin, L. R. Hewitt, A.‐M. Lanzillotto, D. J. Szostak, J. T. McGinn
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:456-460
An investigation was made of Pt–Ir silicide films on (100)Si prepared by deposition of submonolayer thickness of Pt followed by 20–30 A of Ir. Submonolayer coverages of Pt induce a crystalline texture approaching an epitaxial relationship between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5c5d28e6b5d77e9f3323d8394c17fb0
https://doi.org/10.1116/1.577432
https://doi.org/10.1116/1.577432
Publikováno v:
Journal of Electronic Materials. 18:717-720
We have studied semi-insulating Fe:InP regrowth of etched mesa buried heterostruc-ture lasers by hydride vapor phase epitaxy. Type-sensitive staining and electron beam induced current photographs have shown that regions near the original etched mesa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c20594e29c23c5e15669957d97edb36
https://doi.org/10.1007/bf02657524
https://doi.org/10.1007/bf02657524
Publikováno v:
Journal of Electronic Materials. 18:721-730
The effects of preamorphization of silicon by19F,28Si and74Ge implants preceding11B implants have been investigated in this work and compared with BF2 molecular implants. For shallow boron implanted layers less than 0.2 μm deep, the beam purity of B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c00237a10d75c1fcf4090bcfd21477fb
https://doi.org/10.1007/bf02657525
https://doi.org/10.1007/bf02657525