Zobrazeno 1 - 10
of 138
pro vyhledávání: '"L. Pranevicius"'
Autor:
L. Pranevicius, M. Urbonavicius, S. Tuckute, K. Gedvilas, T. Rajackas, L. L. Pranevicius, D. Milcius
Publikováno v:
Advances in Materials Science and Engineering, Vol 2012 (2012)
We have investigated structural and phase transformations in water-vapor-plasma-treated 200–300 nm thick Ti films, maintained at room temperature, by injecting water vapor into radio frequency (RF) plasma at different processing powers. Scanning el
Externí odkaz:
https://doaj.org/article/8ac67f3f21e64f868b889ebcea5fc42c
Autor:
J. Nomgaudyte, Liudas Pranevičius, Darius Milčius, L. L. Pranevicius, J.-P. Riviere, G. Abrasonis, Claude Templier
Publikováno v:
Proceeding of Progress in Plasma Processing of Materials, 2003.
Autor:
Pranas Valatkevicius, Z. Kavaliauskas, Liudas Pranevičius, Liutauras Marcinauskas, L. L. Pranevicius
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 14:245-253
Autor:
L. L. Pranevicius, V. Sirvinskaite, Truls Norby, Darius Milčius, Reidar Haugsrud, Liudvikas Pranevičius, Claude Templier
Publikováno v:
Scopus-Elsevier
Homogeneous yttria stabilised zirconia films were synthesised using thermal annealing of Y/Zr layers of strictly controlled thickness in air in the temperature range 600 - 1000 ° C. Intermixing and oxidation kinetics were investigated. Secondary ion
Mass Transport Driven by Atomic Relocations Under High Flux Ion Irradiation at Elevated Temperatures
Publikováno v:
Surface Engineering. 18:182-187
Experiments with a nitrogen torch at atmospheric pressure have been performed in order to identify the role of surface processes in the mechanism of nitrogen transport during nitriding of stainless steel AISI 304. The unusually thick (~175 μm) layer
Publikováno v:
Thin Solid Films. 376:56-66
The kinetics of carbon sputter deposition on Si(100) substrates were studied by spectroscopic ellipsometry (SE) and X-ray reflectivity (XRR). The energy of ions bombarding the growing film varied by applying a bias voltage on the substrate inducing c
Publikováno v:
Diamond and Related Materials. 8:490-494
A phenomenological model based on the rate equations for the carbon sputter deposition on Si surface is proposed. The processes of carbon adsorption, formation of SiC and transition from sp2 to sp3 sites induced by low energy ion bombardment are incl
Publikováno v:
Diamond and Related Materials. 5:128-133
Experimental studies were performed on the nucleation of diamond crystals on the surface of dielectric SiC layers enriched by carbon during simultaneous carbon deposition and 20 keV H + irradiation at 800 °C. The stochiometric SiC layer with thickne
Autor:
T. Rajackas, Liudvikas Pranevičius, D. Milcius, M. Urbonavicius, Simona Tuckute, Karolis Gedvilas, L. L. Pranevicius
Publikováno v:
Advances in Materials Science and Engineering, Vol 2012 (2012)
We have investigated structural and phase transformations in water-vapor-plasma-treated 200–300 nm thick Ti films, maintained at room temperature, by injecting water vapor into radio frequency (RF) plasma at different processing powers. Scanning el
Autor:
Arvaidas Galdikas, L. Pranevicius
Publikováno v:
Surface and Coatings Technology. 64:167-172
A model for the redistribution of atoms in the altered layer formed by ion bombardment and based on the processes of preferential sputtering and mutual diffusion is considered. The calculated results are compared with experimental results for two- an