Modelling of the catalytic initiation of methane coupling under non-oxidative conditions

Autor: R.S. Postma, P.S.F. Mendes, L. Pirro, A. Banerjee, J.W. Thybaut, L. Lefferts

Publikováno v: Chemical Engineering Journal, 454(Part 3):140273. Elsevier
CHEMICAL ENGINEERING JOURNAL

The experimentally observed interplay between catalytic activation of methane on Fe (c) SiO2 and gas-phase free radical methane coupling under non-oxidative conditions is analyzed by mechanistic modeling as well as by experiments. For the modeling, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98b6cdc6486d6210c98211240e531d3c
https://research.utwente.nl/en/publications/35b1e278-bc17-4971-a132-14984ab601f0

Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

Autor: Matthias L. Vermeer, Jan Hoentschel, L. Pirro, Raymond J. E. Hueting, Jurriaan Schmitz

Publikováno v: IEEE Transactions on Electron Devices, 68(2):9305941, 497-502. IEEE

Quantification of interface traps for double-gate fully depleted silicon-on-insulator transistors is needed for accurate device modeling and technology development. The trap density can be estimated as a function of the activation energy from the sub

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b4799699675d932c9a047238eeecb63
http://www.scopus.com/inward/record.url?scp=85098787528&partnerID=8YFLogxK

Improved gm and RTN Device Performance using Thick SOI in 22FDX® for Analog Applications

Autor: L. Pirro, A. Zaka, S. Morvan, O. Zimmerhackl, R. Nelluri, T. Hermann, M. Majer, H. Pagel, N. Wu, M. Otto, J. Hoentschel

Publikováno v: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54791756f365b1d40b0cdb1ab3cbccae
https://doi.org/10.1109/vlsi-tsa54299.2022.9771046

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Autor: Tristan Meunier, Mikael Casse, Fred Gaillard, Silvano De Franceschi, Maud Vinet, Thorsten Kammler, Christoforos G. Theodorou, L. Pirro, Gerard Ghibaudo, Bruna Cardoso Paz

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩

International audience; This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::708b694d06bf0840770eb2e9e8c5635d
https://doi.org/10.1109/ted.2020.3021999

Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices

Autor: D. Lipp, Y. Raffel, A. Jayakumar, R. Olivo, R. Pfuetzner, R. Illgen, A. Muehlhoff, Jan Hoentschel, L. Pirro, Michael Otto, O. Zimmerhackl, Alban Zaka, Konrad Seidel

Publikováno v: IRPS

In this work buried channel devices were successfully integrated in HKMG. Analog, noise and reliability performance have been reported and compared to a surface device. The devices were processed to have the same V Tsat for the nominal geometry of a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54120bc6f07b89a11389b90cbb78b2d2
https://doi.org/10.1109/irps46558.2021.9405122