Výsledky vyhledávání - "L. Pillatsch"

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Comparison of silicon and 4H silicon carbide patterning using focused ion beams

Autor: S. Beuer, F. Stumpf, M. Rumler, Lothar Frey, Johann Michler, Mathias Rommel, K. Thomas, L. Pillatsch, Savita Kaliya Perumal Veerapandian

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365:44-49

In this work, focused ion beam (FIB) milling of different structures is studied and compared for two different electronic materials, i.e., silicon (Si) and silicon carbide (SiC). Results show that the same processing parameters yield different trench

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14cd10c998b99b3a0a448d1629727ee8
https://doi.org/10.1016/j.nimb.2015.07.079

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Study and optimisation of SIMS performed with He+ and Ne+ bombardment

Autor: L. Pillatsch, John A. Notte, Sybren Sijbrandij, David Dowsett, N. Vanhove, Tom Wirtz

Publikováno v: Applied Surface Science. 282:908-913

The combination of the high-brightness He + /Ne + atomic level ion source with the detection capabilities of secondary ion mass spectrometry (SIMS) opens up the prospect of obtaining chemical information with high lateral resolution and high sensitiv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b791a4d4ef5a0f306fc6d70e48f90109
https://doi.org/10.1016/j.apsusc.2013.06.088

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Use of a duoplasmatron ion source for negative ion generation

Autor: L. Pillatsch, H. Scherrer, Henri-Noël Migeon, Tom Wirtz

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 269:1036-1040

The use of electronegative species as primary ions considerably enhances the emission of positive secondary ions in SIMS. Considering furthermore that negative primary ions can be required due to instrumental configurations (e.g. the Cameca NanoSIMS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e81b6b909f902db7cf698d941242726b
https://doi.org/10.1016/j.nimb.2010.12.087

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SIMS using negative primary ion bombardment

Autor: L. Pillatsch, Henri-Noël Migeon, H. Scherrer, Tom Wirtz

Publikováno v: Surface and Interface Analysis. 42:645-648

Dynamic secondary ion mass spectrometry (D–SIMS) is an extremely powerful analysis technique for studying surfaces and thin films. The development of ion sources using electronegative elements is necessary to optimize the analysis of the electropos

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8b672e257c39fb63235e3e0b0c0dc65
https://doi.org/10.1002/sia.3388

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SIMS using O−, F−, Cl−, Br− and I− primary ion bombardment

Autor: L. Pillatsch, Tom Wirtz

Publikováno v: Surface and Interface Analysis. 44:1370-1372

The success of secondary ion mass spectrometry (SIMS) analyses depends largely on the ionization probability of the analyzed elements. The chemical state of the surface changes with the chemical nature and the concentration of implanted ions. The pos

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb972ea70ac1a4c4a22942c8098793d1
https://doi.org/10.1002/sia.5066

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Towards SIMS on the Helium Ion Microscope: Detection Limits and Experimental Results on the ORION

Autor: Tom Wirtz, L. Pillatsch, David Dowsett, N. Vanhove, Sybren Sijbrandij, John A. Notte

Publikováno v: Microscopy and Microanalysis. 19:354-355

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb03f54d327878bf01c23494e37ece8c
https://doi.org/10.1017/s1431927613003760

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Towards Secondary Ion Mass Spectrometry On The Helium Ion Microscope

Autor: John A. Notte, David Dowsett, Sybren Sijbrandij, N. Vanhove, Tom Wirtz, L. Pillatsch

Publikováno v: Microscopy and Microanalysis. 18:812-813

The ORION Helium Ion Microscope (HIM) has become a well-established tool for high-resolution microscopy [1]. It is based on the atomic-sized ALIS gas field ion source, which has a brightness of 4×10 A cm sr. This leads to probe sizes of less than 0.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13a12d65145575c565381fe83b6d4ede
https://doi.org/10.1017/s1431927612005910

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