Zobrazeno 1 - 10
of 65
pro vyhledávání: '"L. Parthier"'
Autor:
M. Selle, L. Parthier, Alan Owens, P. Schotanus, Pieter Dorenbos, J. van der Biezen, Francesco Quarati
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 729:596-604
Crystal growth and detector fabrication technologies have reached such a state of maturity that high-quality large-volume CeBr3 scintillators can now be produced with dimensions of 2″×2″ and well above. We present a study of CeBr3 samples of var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::968762004d32634daa301e650134d121
https://doi.org/10.1016/j.nima.2013.08.005
https://doi.org/10.1016/j.nima.2013.08.005
Publikováno v:
BASE-Bielefeld Academic Search Engine
Single crystals of CaF2 oriented along 〈 111 〉 for glide on three equally stressed slip systems were used to study the evolution of the dislocation structure during deformation at temperatures from 873 to 1315 K. Structure quantification was done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acfeebb450ac5c6745399538e598fe0e
https://doi.org/10.1016/j.msea.2008.04.086
https://doi.org/10.1016/j.msea.2008.04.086
Publikováno v:
Journal of Crystal Growth. 310:152-155
The binary phase diagram CaF2–SrF2 was investigated by differential thermal analysis (DTA). Both substances exhibit unlimited mutual solubility with an azeotropic point showing a minimum melting temperature of T min = 1373 ∘ C for the composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0eeeb5657a90d5c47855e5c3ffcd73b
https://doi.org/10.1016/j.jcrysgro.2007.09.031
https://doi.org/10.1016/j.jcrysgro.2007.09.031
Autor:
Fritz Henneberger, D. Wruck, B. Reinhold, Krzysztof Pakuła, Reiner Vianden, J. M. Baranowski, H. E. Mahnke, Katharina Lorenz, L. Parthier
Publikováno v:
ResearcherID
Extended x-ray absorption fine structure and photoluminescence studies were performed on epitaxial GaN films implanted with 1×1016 cm-2 Er ions at 80 and 160 keV and, for a part of the samples, co-implanted with oxygen ions at 23 keV, followed by an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d03c1a0575932582e63f28b98a3dae99
https://doi.org/10.1088/0268-1242/16/11/101
https://doi.org/10.1088/0268-1242/16/11/101
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 10:511-517
Relaxation from spatially direct to the spatially indirect exciton through ZnSe barriers of different thicknesses is investigated in (ZnCdMn)Se/ZnSe/(ZnCd)Se asymmetric double quantum wells by use of magneto-optical steady-state photoluminescence (PL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93b22de160b10d6e09e773542262461f
https://doi.org/10.1016/s1386-9477(01)00148-5
https://doi.org/10.1016/s1386-9477(01)00148-5
Publikováno v:
Journal of Applied Physics. 84:6049-6054
We present extended x-ray absorption fine structure measurements performed on ZnTe:Sm films, at the Sm L3 edge. The films (thickness several hundred nanometers) were grown by molecular beam epitaxy on GaAs substrates and were doped during growth, ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4d992fca07fc6ebca54e3b1a599e76f
https://doi.org/10.1063/1.368914
https://doi.org/10.1063/1.368914
Publikováno v:
Journal of Crystal Growth. :119-123
Sm-doped ZnTe films with thicknesses several hundred nm were grown by molecular-beam epitaxy (MBE) on GaAs substrates at temperatures between 300 and 400°C. Sm concentrations between about 10 18 and about 10 22 cm −3 , as determined by X-ray micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03da44ac20e2433a41cab75ac86b879e
https://doi.org/10.1016/s0022-0248(98)80306-0
https://doi.org/10.1016/s0022-0248(98)80306-0
Autor:
O. Portugall, H. Kunimatsu, L. Parthier, N. Miura, M. von Ortenberg, S. Luther, Kazuhito Uchida
Publikováno v:
Journal of Crystal Growth. :339-342
Quantum wire structures with semimagnetic barriers, ZnSe/(Zn, Mn)Se, and different buffer layers are investigated by magnetoluminescense in magnetic fields up to 40 T at 4 K. For the lowest energy state the in situ grown wires always show a stronger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf462880abd45a97b85b88b35a3e4926
https://doi.org/10.1016/s0022-0248(98)80072-9
https://doi.org/10.1016/s0022-0248(98)80072-9
Autor:
L Parthier
Publikováno v:
Journal of Crystal Growth. :339-342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebf3870bf697ccbf68bd3edc029dc809
https://doi.org/10.1016/s0022-0248(97)00652-0
https://doi.org/10.1016/s0022-0248(97)00652-0
Autor:
H. Wißmann, R. Köhler, G. Machel, M. von Ortenberg, S. Luther, Martin Schmidbauer, L. Parthier
Publikováno v:
Journal of Crystal Growth. :642-646
HgSe layer on ZnTe and ZnTe 1-x Se x layers were grown by molecular beam epitaxy. The introduction of a GaSb substrate reduces the lattice mismatch drastically ( f = - 0.11 %) compared to GaAs (f = - 7A%). By spatial variation of the Se content from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15acd11de5bcb4f7f6333924b872b2a9
https://doi.org/10.1016/s0022-0248(96)00993-1
https://doi.org/10.1016/s0022-0248(96)00993-1