Zobrazeno 1 - 10
of 28
pro vyhledávání: '"L. Parissi"'
Publikováno v:
Proceedings of the International Thermal Plasma Processes Conference.
Publikováno v:
Proceeding of Progress in Plasma Processing of Materials, 2001.
Autor:
Denis Guimard, O. Kerrec, Pierre-Philippe Grand, Veronica Bermudez, O. Roussel, J. Kurdi, L. Parissi, Negar Naghavi, James P. Connolly, Jean-François Guillemoles, Daniel Lincot, O. Ramdani, John Kessler
Publikováno v:
Journal of Nano Research. 4:79-89
Inorganic semiconductors have properties that are notoriously difficult to control due to the deleterious impact of crystalline imperfections, and this is especially so in solar cells. In this work, it is demonstrated that materials grown using wet c
Autor:
Joan Ramon Morante, O. Kerrec, J. Álvarez-García, Alejandro Pérez-Rodríguez, V. Izquierdo, J. Kurdi, Lorenzo Calvo-Barrio, L. Parissi, Veronica Bermudez, O. Ramdani, Pierre-Philippe Grand
Publikováno v:
Thin Solid Films. 516:7021-7025
The Raman scattering analysis of S-rich CuIn(S,Se) 2 layers produced by electrodeposition of CuInSe 2 precursors and annealing under sulphurising conditions shows the strong dependence of their crystalline quality on the annealing parameters. Worseni
Autor:
Daniel Lincot, Frédérique Donsanti, L. Parissi, A. Sorba, C. Broussillou, Nathanaelle Schneider, Cathy Bugot
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
In this study, we investigate the performances of Cu(In,Ga)(S,Se)2/Zn(O,S) devices varying both the absorber and the deposition temperature of the atomic layer deposited Zn(O,S) buffer layer. For both types of devices, two ranges of Zn(O,S) depositio
Autor:
L. Parissi, S. Bodnar, C. Broussillou, J.L. Allary, A. Rogee, C. Viscogliosi, S. Angle, C. Debauche, B. Bertrand, Pierre-Philippe Grand, C. Guillou, S. Coletti
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
The company NEXCIS has developed a 2-step process based on the electrodeposition (ED) of a metallic precursor subsequently annealed to produce Cu(In,Ga)(S,Se)2 absorbers (CIGS). The metallic precursor is electrodeposited on a highly conductive Mo-bas
Autor:
J. Sicx-Kurdi, James P. Connolly, Moez Benfarah, Paul C. Mogensen, O. Kerrec, Stephane Taunier, O. Roussel, Pierre-Philippe Grand, E. Mahe, Daniel Lincot, L. Parissi, Jean-François Guillemoles, P. Panheleux, O. Ramdani, A. Chomont, Negar Naghavi, J.P. Fauvarque, Cédric Hubert
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2005, 480-481, pp.526-531. ⟨10.1016/j.tsf.2004.11.200⟩
Thin Solid Films, 2005, 480-481, pp.526-531. ⟨10.1016/j.tsf.2004.11.200⟩
Thin Solid Films, Elsevier, 2005, 480-481, pp.526-531. ⟨10.1016/j.tsf.2004.11.200⟩
Thin Solid Films, 2005, 480-481, pp.526-531. ⟨10.1016/j.tsf.2004.11.200⟩
The CIS by electrodeposition (CISEL) project between Electricite de France (EDF), Centre National de la Recherche Scientifique (CNRS)/Ecole Nationale Superieure de Chimie de Paris (ENSCP) and Saint-Gobain Recherche (SGR) aims at developing a low-cost
Autor:
O. Kerrec, Moez Benfarah, P. Fanouillere, Negar Naghavi, J.P. Fauvarque, Cédric Hubert, L. Parissi, Daniel Lincot, A. Chaumont, J. Sicx-Kurdi, O. Ramdani, Denis Guimard, Paul C. Mogensen, N. Bodereau, P. Panheleux, Pierre-Philippe Grand, Jean-François Guillemoles, Stephane Taunier, O. Roussel
Publikováno v:
Solar Energy. 77:725-737
This paper reviews the state of the art in using electrodeposition to prepare chalcopyrite absorber layers in thin film solar cells. Most of the studies deal with the direct preparation of Cu(In,Ga)Se 2 films, and show that the introduction of galliu
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2009, vol. 517, pp. 4436-4442. ⟨10.1016/j.tsf.2009.01.043⟩
Thin Solid Films, Elsevier, 2009, vol. 517, pp. 4436-4442. ⟨10.1016/j.tsf.2009.01.043⟩
International audience; Electrodeposited CuInSe2 thin films are of potential importance, as light absorber material, in the next generation of photovoltaic cells as long as we can optimize their annealing process to obtain dense and highly crystallin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0ea2fa1fe724439a455f7bbf62f112d
https://hal.archives-ouvertes.fr/hal-00864932/file/Gobeaut_8665.pdf
https://hal.archives-ouvertes.fr/hal-00864932/file/Gobeaut_8665.pdf
Autor:
Veronica Bermudez, Joan Ramon Morante, L. Parissi, Edgardo Saucedo, C. Broussillou, Pierre-Philippe Grand, J.S. Jaime-Ferrer, Victor Izquierdo-Roca, Alejandro Pérez-Rodríguez, Carmen M. Ruiz
Publikováno v:
Thin Solid Films
Thin Solid Films, 2009, 517 (7), pp.2268-2271. ⟨10.1016/J.TSF.2008.10.144⟩
Thin Solid Films, Elsevier, 2009, 517 (7), pp.2268-2271. ⟨10.1016/J.TSF.2008.10.144⟩
Thin Solid Films, 2009, 517 (7), pp.2268-2271. ⟨10.1016/J.TSF.2008.10.144⟩
Thin Solid Films, Elsevier, 2009, 517 (7), pp.2268-2271. ⟨10.1016/J.TSF.2008.10.144⟩
Using micro-Raman spectroscopy, we demonstrate that the formation of the CuS binary phase in CISEL™ cells absorbers is highly determined by the presence of a Cu–Se binary phase in the precursors and depends on the Cu/In ratio. A selective sulphur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::969a9b427132dc75223a8323986370fb
https://hal.science/hal-03436401
https://hal.science/hal-03436401