Zobrazeno 1 - 10
of 280
pro vyhledávání: '"L. Pancheri"'
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
Monolithic Active Pixel Sensors (MAPS) represent one of the most promising technologies for the next generation of radiation detectors. The ARCADIA project aims at the development of Fully Depleted (FD) MAPS employing a production process compatible
Externí odkaz:
https://doaj.org/article/511d49830bed4f91ab7b4e0dbb82a5ab
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
Fully depleted monolithic active pixel sensors (FD-MAPSs) represent a state-of-the-art detector technology and profit from a low material budget and cost for high-energy physics experiments and other fields of research like medical imaging and astro-
Externí odkaz:
https://doaj.org/article/194979742f894b2d957262cd5747d647
Publikováno v:
Sensors, Vol 2, Iss 3, Pp 121-126 (2002)
We investigated the possibility of using several sensing parameters from porous silicon in order to improve gas selectivity. By fabricating porous silicon optical microcavities, three independent quantities can be measured, i.e. the electrical conduc
Externí odkaz:
https://doaj.org/article/c24ca9d13d064244809aec6787bbbb66
Akademický článek
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Autor:
F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, D. Cavazza, G. -F. Dalla Betta, S. Durando, M. Ferrero, F. Ficorella, O. Hammad Ali, M. Mandurrino, A. Margotti, L. Menzio, R. Nania, L. Pancheri, G. Paternoster, G. Scioli, F. Siviero, V. Sola, M. Tornago, G. Vignola
Publikováno v:
The European Physical Journal Plus. 138
This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a
Akademický článek
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Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1048:167946
Autor:
L. Menzio, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, M. Costa, G-F. Dalla Betta, M. Ferrero, F. Ficorella, G. Gioachin, M. Mandurrino, L. Pancheri, G. Paternoster, F. Siviero, V. Sola, M. Tornago
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bee73bddcaa2fa85a202a3687a4fabf9
Publikováno v:
Journal of Instrumentation. 18:C02045
The development of novel Monolithic Active Pixel Sensor (MAPS) technologies has been pursued by several collaborations in the last two decades. The ARCADIA project aims to design fully depleted MAPS for medical, space, HEP and X-ray detection applica
Autor:
G. Torilla, J. Minga, P. Brogi, G. Collazuol, G.-F. Dalla Betta, P.S. Marrocchesi, L. Pancheri, L. Ratti, C. Vacchi
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1046:167693